Effect of additional silicon on titanium/4H-SiC contacts properties

The Ti electrode was deposited on the （0001） face of an n-type 4H-SiC substrate by magnetron sputtering. The effect of the electrode placement method during the annealing treatment on the contact property was carefully investigated. When the electrode was faced to the Si tray and annealed, it showed...

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Published in	Chinese physics B Vol. 23; no. 5; pp. 516 - 520
Main Author	张永平陈之战卢吴越谈嘉慧程越石旺舟
Format	Journal Article
Language	English
Published	01.05.2014
Subjects	4H-SiC Annealing Atomic force microscopy Electrodes Scanning electron microscopy Silicon Titanium Trays X-rays X-射线光电子能谱 X-射线衍射原子力显微镜扫描电子显微镜接触特性欧姆接触硅
Online Access	Get full text
ISSN	1674-1056 2058-3834 1741-4199
DOI	10.1088/1674-1056/23/5/057303

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Summary:	The Ti electrode was deposited on the （0001） face of an n-type 4H-SiC substrate by magnetron sputtering. The effect of the electrode placement method during the annealing treatment on the contact property was carefully investigated. When the electrode was faced to the Si tray and annealed, it showed ohmic behavior, otherwise it showed a non-ohmic property. X-ray diffraction （XRD）, X-ray photoelectron spectroscopy （XPS）, scanning electron microscopy （SEM）, and atomic force microscopy （AFM） were used to characterize the electrode phase, composition, thickness, and surface morphology. The additional silicon introduced from the Si tray played a key role in the formation of the ohmic contact on the Ti/4H-SiC contact.
Bibliography:	Ti/4H-SiC, ohmic contact, surface morphology, additional silicon Zhang Yong-Ping, Chen Zhi-Zhan, Lu Wu-Yue , Tan Jia-Hui, Cheng Yue, Shi Wang-Zhou（ Shanghai Normal University, Shanghai 200234, China） The Ti electrode was deposited on the （0001） face of an n-type 4H-SiC substrate by magnetron sputtering. The effect of the electrode placement method during the annealing treatment on the contact property was carefully investigated. When the electrode was faced to the Si tray and annealed, it showed ohmic behavior, otherwise it showed a non-ohmic property. X-ray diffraction （XRD）, X-ray photoelectron spectroscopy （XPS）, scanning electron microscopy （SEM）, and atomic force microscopy （AFM） were used to characterize the electrode phase, composition, thickness, and surface morphology. The additional silicon introduced from the Si tray played a key role in the formation of the ohmic contact on the Ti/4H-SiC contact. 11-5639/O4 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	1674-1056 2058-3834 1741-4199
DOI:	10.1088/1674-1056/23/5/057303