石旺舟, 张. 陈. 卢. 谈. 程. (2014). Effect of additional silicon on titanium/4H-SiC contacts properties. Chinese physics B, 23(5), 516-520. https://doi.org/10.1088/1674-1056/23/5/057303
Chicago Style (17th ed.) Citation石旺舟, 张永平 陈之战 卢吴越 谈嘉慧 程越. "Effect of Additional Silicon on Titanium/4H-SiC Contacts Properties." Chinese Physics B 23, no. 5 (2014): 516-520. https://doi.org/10.1088/1674-1056/23/5/057303.
MLA (9th ed.) Citation石旺舟, 张永平 陈之战 卢吴越 谈嘉慧 程越. "Effect of Additional Silicon on Titanium/4H-SiC Contacts Properties." Chinese Physics B, vol. 23, no. 5, 2014, pp. 516-520, https://doi.org/10.1088/1674-1056/23/5/057303.
Warning: These citations may not always be 100% accurate.