Application of a macromolecular chelating agent in chemical mechanical polishing of copper film under the condition of low pressure and low abrasive concentration

The mechanism of the FA/O chelating agent in the process of chemical mechanical polishing （CMP） is introduced. CMP is carried on a φ300 mm copper film. The higher polishing rate and lower surface roughness are acquired due to the action of an FA/O chelating agent with an extremely strong chelating a...

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Bibliographic Details
Published inJournal of semiconductors Vol. 35; no. 1; pp. 146 - 150
Main Author 李炎 刘玉岭 牛新环 卜小峰 李洪波 唐继英 樊世燕
Format Journal Article
LanguageEnglish
Published 2014
Subjects
ABRASIVE MATERIALS
Abrasives
Chelating
Chemical-mechanical polishing
CMP
Copper
HIGH VACUUM
Low pressure
MECHANICAL POLISHING
MICA
POLISHING
PRESSURE
Reagents
SEMICONDUCTORS
低压力
化学机械抛光
应用
磨料浓度
表面粗糙度
铜膜
高分子螯合剂
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ISSN1674-4926
DOI10.1088/1674-4926/35/1/016001

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Summary:The mechanism of the FA/O chelating agent in the process of chemical mechanical polishing （CMP） is introduced. CMP is carried on a φ300 mm copper film. The higher polishing rate and lower surface roughness are acquired due to the action of an FA/O chelating agent with an extremely strong chelating ability under the condition of low pressure and low abrasive concentration during the CMP process. According to the results of several kinds of additive interaction curves when the pressure is 13.78 kPa, flow rate is 150 mL/min, and the rotating speed is 55/60 rpm, it can be demonstrated that the FA/O chelating agent plays important role during the CMP process.
Bibliography:Li Yan, Liu Yuling, Niu Xinhuan, Bu Xiaofeng, Li Hongbo, Tang Jiying, and Fan Shiyan （ 1 Institute of Microelectronics, H ebei University of Technology, Tianjin 300130, China 2 Tianfang Limited Company of Detection Technology, Guangdong, Dongguan 523160, China）
FA/O chelating agent; more hydroxyl amine; low pressure and low concentration of abrasive; copperCMP; surface roughness
11-5781/TN
The mechanism of the FA/O chelating agent in the process of chemical mechanical polishing （CMP） is introduced. CMP is carried on a φ300 mm copper film. The higher polishing rate and lower surface roughness are acquired due to the action of an FA/O chelating agent with an extremely strong chelating ability under the condition of low pressure and low abrasive concentration during the CMP process. According to the results of several kinds of additive interaction curves when the pressure is 13.78 kPa, flow rate is 150 mL/min, and the rotating speed is 55/60 rpm, it can be demonstrated that the FA/O chelating agent plays important role during the CMP process.
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/35/1/016001