Extrinsic Base Surface Passivation in High Speed ＂Type-II＂ GaAsSb/InP DHBTs Using an InGaAsP Ledge Structure

Type-II GaAsSb/InP DHBTs with selectively-etched InGaAsP ledge structures are fabricated and characterized for the first time. The novel InGaAsP/GaAsSb/InP DHBTs with a 20nm lattice-matched GaAsSb base and a 75 nm InP collector have a dc current gain improvement by a factor of 2 and a cutoff frequen...

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Bibliographic Details
Published inChinese physics letters Vol. 27; no. 5; pp. 261 - 263
Main Author 刘洪刚 金智 苏永波 王显泰 常虎东 周磊 刘新宇 吴德馨
Format Journal Article
LanguageEnglish
Published 01.05.2010
Subjects
Accumulators
Collectors
Direct current
GaAsSb
Gain
High speed
Indium phosphides
InGaAsP
Ledges
Passivation
砷化镓
磷化铟
表面钝化
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ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/27/5/058502

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Summary:Type-II GaAsSb/InP DHBTs with selectively-etched InGaAsP ledge structures are fabricated and characterized for the first time. The novel InGaAsP/GaAsSb/InP DHBTs with a 20nm lattice-matched GaAsSb base and a 75 nm InP collector have a dc current gain improvement by a factor of 2 and a cutoff frequency fT of 190 GHz. The InGaAsP ledge design provides a simple but effective approach to suppress the extrinsic base surface recombination and enable GaAsSb/InP DHBTs to further increase the operating frequencies and integration levels for millimeter wave applications.
Bibliography:11-1959/O4
TN248.4
TN304.23
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ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/27/5/058502