李述体, 刘. 任. 陈. 赵. 王. 尹. (2013). Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer. Chinese physics B, 22(5), 604-608. https://doi.org/10.1088/1674-1056/22/5/058502
Chicago Style (17th ed.) Citation李述体, 刘超 任志伟 陈鑫 赵璧君 王幸福 尹以安. "Advantages of an InGaN-based Light Emitting Diode with a P-InGaN/p-GaN Superlattice Hole Accumulation Layer." Chinese Physics B 22, no. 5 (2013): 604-608. https://doi.org/10.1088/1674-1056/22/5/058502.
MLA (9th ed.) Citation李述体, 刘超 任志伟 陈鑫 赵璧君 王幸福 尹以安. "Advantages of an InGaN-based Light Emitting Diode with a P-InGaN/p-GaN Superlattice Hole Accumulation Layer." Chinese Physics B, vol. 22, no. 5, 2013, pp. 604-608, https://doi.org/10.1088/1674-1056/22/5/058502.
Warning: These citations may not always be 100% accurate.