Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer

P-InGaN/p-GaN superlattices （SLs） are developed for a hole accumulation layer （HAL） of a blue light emitting diode （LED）. Free hole concentration as high as 2.6× 1018 cm-3 is achieved by adjusting the Cp2Mg flow rate during the growth of p-InGaN/p-GaN SLs. The p-InGaN/p-GaN SLs with appropriate Cp2M...

Full description

Saved in:
Bibliographic Details
Published inChinese physics B Vol. 22; no. 5; pp. 604 - 608
Main Author 刘超 任志伟 陈鑫 赵璧君 王幸福 尹以安 李述体
Format Journal Article
LanguageEnglish
Published 01.05.2013
Subjects
Adjustment
Aluminum gallium nitrides
Blocking
Flow rate
HAL
InGaN
Leakage
LED
Light-emitting diodes
Performance enhancement
Superlattices
光输出功率
积聚
空穴浓度
蓝色发光二极管
超晶格结构
Online AccessGet full text
ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/22/5/058502

Cover

More Information
Summary:P-InGaN/p-GaN superlattices （SLs） are developed for a hole accumulation layer （HAL） of a blue light emitting diode （LED）. Free hole concentration as high as 2.6× 1018 cm-3 is achieved by adjusting the Cp2Mg flow rate during the growth of p-InGaN/p-GaN SLs. The p-InGaN/p-GaN SLs with appropriate Cp2Mg flow rates are then incorporated between the multi-quantum well and A1GaN electron blocking layer as an HAL, which leads to the enhancement of light output power by 29% at 200 mA, compared with the traditional LED without such SL HAL. Meanwhile, the efficiency droop is also effectively alleviated in the LED with the SL HAL. The improved performance is attributed to the increased hole injection efficiency, and the reduced electron leakage by inserting the p-type SL HAL.
Bibliography:Liu Chao, Ren Zhi-Wei, Chen Xin, Zhao Bi-Jun, Wang Xing-Fu, Yin Yi-An, and Li Shu-Ti（ Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China）
light emitting diodes, hole accumulation layer, efficiency droop
11-5639/O4
P-InGaN/p-GaN superlattices （SLs） are developed for a hole accumulation layer （HAL） of a blue light emitting diode （LED）. Free hole concentration as high as 2.6× 1018 cm-3 is achieved by adjusting the Cp2Mg flow rate during the growth of p-InGaN/p-GaN SLs. The p-InGaN/p-GaN SLs with appropriate Cp2Mg flow rates are then incorporated between the multi-quantum well and A1GaN electron blocking layer as an HAL, which leads to the enhancement of light output power by 29% at 200 mA, compared with the traditional LED without such SL HAL. Meanwhile, the efficiency droop is also effectively alleviated in the LED with the SL HAL. The improved performance is attributed to the increased hole injection efficiency, and the reduced electron leakage by inserting the p-type SL HAL.
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/5/058502