Light-extraction efficiency and forward voltage in GaN-based light-emitting diodes with different patterns of V-shaped pits
We present a new method of making a textured V-pit surface for improving the light extraction efficiency in GaN- based light-emitting diodes and compare it with the usual low-temperature method for p-GaN V-pits. Three types of GaNbased light-emitting diodes （LEDs） with surface V-pits in different de...
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| Published in | Chinese physics B Vol. 22; no. 8; pp. 547 - 550 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.08.2013
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 1741-4199 |
| DOI | 10.1088/1674-1056/22/8/086803 |
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| Abstract | We present a new method of making a textured V-pit surface for improving the light extraction efficiency in GaN- based light-emitting diodes and compare it with the usual low-temperature method for p-GaN V-pits. Three types of GaNbased light-emitting diodes （LEDs） with surface V-pits in different densities and regions were grown by metal-organic chemical vapor deposition. We achieved the highest output power and lowest forward voltage values with the p-InGaN V-pit LED. The V-pits enhanced the light output power values by 1.45 times the values of the conventional LED owing to an enhancement of the light scattering probability and an effective reduction of Mg-acceptor activation energy. Moreover, this new technique effectively solved the higher forward voltage problem of the usual V-pit LED. |
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| AbstractList | We present a new method of making a textured V-pit surface for improving the light extraction efficiency in GaN-based light-emitting diodes and compare it with the usual low-temperature method for p-GaN V-pits. Three types of GaN-based light-emitting diodes (LEDs) with surface V-pits in different densities and regions were grown by metal-organic chemical vapor deposition. We achieved the highest output power and lowest forward voltage values with the p-InGaN V-pit LED. The V-pits enhanced the light output power values by 1.45 times the values of the conventional LED owing to an enhancement of the light scattering probability and an effective reduction of Mg-acceptor activation energy. Moreover, this new technique effectively solved the higher forward voltage problem of the usual V-pit LED. We present a new method of making a textured V-pit surface for improving the light extraction efficiency in GaN- based light-emitting diodes and compare it with the usual low-temperature method for p-GaN V-pits. Three types of GaNbased light-emitting diodes （LEDs） with surface V-pits in different densities and regions were grown by metal-organic chemical vapor deposition. We achieved the highest output power and lowest forward voltage values with the p-InGaN V-pit LED. The V-pits enhanced the light output power values by 1.45 times the values of the conventional LED owing to an enhancement of the light scattering probability and an effective reduction of Mg-acceptor activation energy. Moreover, this new technique effectively solved the higher forward voltage problem of the usual V-pit LED. |
| Author | 王敏帅 黄晓菁 |
| AuthorAffiliation | Department of Physics, School of Science, Jimei University, Xiamen 361021, China |
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| CitedBy_id | crossref_primary_10_1063_5_0215336 crossref_primary_10_1109_LED_2014_2304972 crossref_primary_10_1016_j_optmat_2025_116934 |
| Cites_doi | 10.1109/LPT.2006.885210 10.1116/1.582314 10.1016/j.jcrysgro.2003.08.075 10.1063/1.3236784 10.1088/1674-1056/21/7/077103 10.1063/1.3554426 10.1063/1.3466768 10.1149/1.2076987 10.1002/adma.200701015 10.1016/j.mseb.2004.05.003 10.1063/1.122229 10.1063/1.1645992 10.1063/1.1571962 10.1109/LPT.2011.2180523 10.1088/1674-1056/21/5/058504 10.1063/1.3454240 10.1063/1.3279149 10.1088/1674-1056/21/3/037105 10.1149/1.2353514 10.1063/1.2783474 |
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| DocumentTitleAlternate | Light-extraction efficiency and forward voltage in GaN-based light-emitting diodes with different patterns of V-shaped pits |
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| Notes | Wang Min-Shuai and Huang Xiao-Jing Department of Physics, School of Science, Jimei University, Xiamen 361021, China We present a new method of making a textured V-pit surface for improving the light extraction efficiency in GaN- based light-emitting diodes and compare it with the usual low-temperature method for p-GaN V-pits. Three types of GaNbased light-emitting diodes （LEDs） with surface V-pits in different densities and regions were grown by metal-organic chemical vapor deposition. We achieved the highest output power and lowest forward voltage values with the p-InGaN V-pit LED. The V-pits enhanced the light output power values by 1.45 times the values of the conventional LED owing to an enhancement of the light scattering probability and an effective reduction of Mg-acceptor activation energy. Moreover, this new technique effectively solved the higher forward voltage problem of the usual V-pit LED. V-shaped pits, light-extraction efficiency, forward voltage 11-5639/O4 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| References | 11 12 Huang X H (5) 2012; 21 13 14 15 16 18 19 Kondratyev A V (17) 2008; 6 1 Chen J (3) 2012; 21 4 6 7 8 9 Zhang W (2) 2012; 21 20 10 21 |
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| Snippet | We present a new method of making a textured V-pit surface for improving the light extraction efficiency in GaN- based light-emitting diodes and compare it... We present a new method of making a textured V-pit surface for improving the light extraction efficiency in GaN-based light-emitting diodes and compare it with... |
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| SubjectTerms | Activation energy Chemical vapor deposition Density Electric potential Extraction Light-emitting diodes p-GaN Pits Reduction Voltage 光提取效率 发光二极管 同型 正向电压 金属有机化学气相沉积 高输出功率 |
| Title | Light-extraction efficiency and forward voltage in GaN-based light-emitting diodes with different patterns of V-shaped pits |
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