Light-extraction efficiency and forward voltage in GaN-based light-emitting diodes with different patterns of V-shaped pits

We present a new method of making a textured V-pit surface for improving the light extraction efficiency in GaN- based light-emitting diodes and compare it with the usual low-temperature method for p-GaN V-pits. Three types of GaNbased light-emitting diodes （LEDs） with surface V-pits in different de...

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Published inChinese physics B Vol. 22; no. 8; pp. 547 - 550
Main Author 王敏帅 黄晓菁
Format Journal Article
LanguageEnglish
Published 01.08.2013
Subjects
Activation energy
Chemical vapor deposition
Density
Electric potential
Extraction
Light-emitting diodes
p-GaN
Pits
Reduction
Voltage
光提取效率
发光二极管
同型
正向电压
金属有机化学气相沉积
高输出功率
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/22/8/086803

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Summary:We present a new method of making a textured V-pit surface for improving the light extraction efficiency in GaN- based light-emitting diodes and compare it with the usual low-temperature method for p-GaN V-pits. Three types of GaNbased light-emitting diodes （LEDs） with surface V-pits in different densities and regions were grown by metal-organic chemical vapor deposition. We achieved the highest output power and lowest forward voltage values with the p-InGaN V-pit LED. The V-pits enhanced the light output power values by 1.45 times the values of the conventional LED owing to an enhancement of the light scattering probability and an effective reduction of Mg-acceptor activation energy. Moreover, this new technique effectively solved the higher forward voltage problem of the usual V-pit LED.
Bibliography:Wang Min-Shuai and Huang Xiao-Jing Department of Physics, School of Science, Jimei University, Xiamen 361021, China
We present a new method of making a textured V-pit surface for improving the light extraction efficiency in GaN- based light-emitting diodes and compare it with the usual low-temperature method for p-GaN V-pits. Three types of GaNbased light-emitting diodes （LEDs） with surface V-pits in different densities and regions were grown by metal-organic chemical vapor deposition. We achieved the highest output power and lowest forward voltage values with the p-InGaN V-pit LED. The V-pits enhanced the light output power values by 1.45 times the values of the conventional LED owing to an enhancement of the light scattering probability and an effective reduction of Mg-acceptor activation energy. Moreover, this new technique effectively solved the higher forward voltage problem of the usual V-pit LED.
V-shaped pits, light-extraction efficiency, forward voltage
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/8/086803