黄晓菁, 王. (2013). Light-extraction efficiency and forward voltage in GaN-based light-emitting diodes with different patterns of V-shaped pits. Chinese physics B, 22(8), 547-550. https://doi.org/10.1088/1674-1056/22/8/086803
Chicago Style (17th ed.) Citation黄晓菁, 王敏帅. "Light-extraction Efficiency and Forward Voltage in GaN-based Light-emitting Diodes with Different Patterns of V-shaped Pits." Chinese Physics B 22, no. 8 (2013): 547-550. https://doi.org/10.1088/1674-1056/22/8/086803.
MLA (9th ed.) Citation黄晓菁, 王敏帅. "Light-extraction Efficiency and Forward Voltage in GaN-based Light-emitting Diodes with Different Patterns of V-shaped Pits." Chinese Physics B, vol. 22, no. 8, 2013, pp. 547-550, https://doi.org/10.1088/1674-1056/22/8/086803.
Warning: These citations may not always be 100% accurate.