The supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells

Using computer-aided design three-dimensional simulation technology,the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated.It reveals that the recovery linear energy transfer threshold decreases with the...

Full description

Saved in:
Bibliographic Details
Published inChinese physics B Vol. 22; no. 2; pp. 591 - 594
Main Author 李达维 秦军瑞 陈书明
Format Journal Article
LanguageEnglish
Published 01.02.2013
Subjects
Charge
Collection
Electric potential
Memory (computers)
Recovery
Single event upsets
Three dimensional
Voltage
动态电压缩放
存储单元
氧化物
电压依赖性
电源电压
计算机辅助设计
随机存取
静态
Online AccessGet full text
ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/22/2/029402

Cover

More Information
Summary:Using computer-aided design three-dimensional simulation technology,the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated.It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing,which is quite attractive for dynamic voltage scaling and subthreshold circuit radiation-hardened design.Additionally,the effect of supply voltage on charge collection is also investigated.It is concluded that the supply voltage mainly affects the bipolar gain of the parasitical bipolar junction transistor（BJT） and the existence of the source plays an important role in supply voltage variation.
Bibliography:single event upset,multi-node charge collection,recovery,ultra-low ower voltage
11-5639/O4
Using computer-aided design three-dimensional simulation technology,the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated.It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing,which is quite attractive for dynamic voltage scaling and subthreshold circuit radiation-hardened design.Additionally,the effect of supply voltage on charge collection is also investigated.It is concluded that the supply voltage mainly affects the bipolar gain of the parasitical bipolar junction transistor（BJT） and the existence of the source plays an important role in supply voltage variation.
Li Da-Wei, Qin Jun-Rui , Chen Shu-Ming（ College of Compute1. National University of Defense Technology, Changsha 410073, China）
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/2/029402