Engineering of electronic and optical properties of ZnO thin films via Cu doping

ZnO thin films doped with different Cu concentrations are fabricated by reactive magnetron sputtering technique. XRD analysis indicates that the crystal quality of the ZnO：Cu film can be enhanced by a moderate level of Cu-doping in the sputtering process. The results of XPS spectra of zinc, oxygen,...

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Published inChinese physics B Vol. 22; no. 4; pp. 491 - 494
Main Author 张国恒 邓小燕 薛华 向钢
Format Journal Article
LanguageEnglish
Published 01.04.2013
Subjects
Copper
Doping
Magnetron sputtering
Optical properties
PROPERTIES
Spectra
SPUTTERING
THIN FILMS
X RAY SPECTROSCOPY
X-ray photoelectron spectroscopy
XRD分析
Zinc
ZINC OXIDE
ZnO薄膜
光学性质
工程
氧化锌
电子
磁控溅射技术
铜掺杂
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/22/4/047803

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Summary:ZnO thin films doped with different Cu concentrations are fabricated by reactive magnetron sputtering technique. XRD analysis indicates that the crystal quality of the ZnO：Cu film can be enhanced by a moderate level of Cu-doping in the sputtering process. The results of XPS spectra of zinc, oxygen, and copper elements show that Cu-doping has an evident and complicated effect on the chemical state of oxygen, but little effect on those of zinc and copper. Interestingly, further investigation of the optical properties of ZnO：Cu samples shows that the transmittance spectra exhibit both red shift and blue shift with the increase of Cu doping, in contrast to the simple monotonic behavior of the Burstein–Moss effect. Analysis reveals that this is due to the competition between oxygen vacancies and intrinsic and surface states of oxygen in the sample. Our result may suggest an effective way of tuning the bandgap of ZnO samples.
Bibliography:ZnO thin films doped with different Cu concentrations are fabricated by reactive magnetron sputtering technique. XRD analysis indicates that the crystal quality of the ZnO：Cu film can be enhanced by a moderate level of Cu-doping in the sputtering process. The results of XPS spectra of zinc, oxygen, and copper elements show that Cu-doping has an evident and complicated effect on the chemical state of oxygen, but little effect on those of zinc and copper. Interestingly, further investigation of the optical properties of ZnO：Cu samples shows that the transmittance spectra exhibit both red shift and blue shift with the increase of Cu doping, in contrast to the simple monotonic behavior of the Burstein–Moss effect. Analysis reveals that this is due to the competition between oxygen vacancies and intrinsic and surface states of oxygen in the sample. Our result may suggest an effective way of tuning the bandgap of ZnO samples.
Zhang Guo-Heng , Deng Xiao-Yan , Xue Hua , Xiang Gang （ a） Key Laboratory for Electronic Materials of the State National Affairs Commission of PRC, School of Electrical Engineering, Northwest University for Nationality, Lanzhou 730030, China b） Department of Physics and Key Laboratory for Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064, China
11-5639/O4
ZnO thin films; Cu doping; optical properties; bandgap tuning
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/4/047803