Impact of the lateral width of the gate recess on the DC and RF characteristics of InAlAs/InGaAs HEMTs

We fabricated 88 nm gate-length InP-based InAlAs/InGaAs high electron mobility transistors(HEMTs) with a current gain cutoff frequency of 100 GHz and a maximum oscillation frequency of 185 GHz.The characteristics of HEMTs with side-etched region lengths(L_(Side)) of 300,412 and 1070 nm were analyzed...

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Published inJournal of semiconductors Vol. 33; no. 5; pp. 61 - 65
Main Author 钟英辉 王显泰 苏永波 曹玉雄 金智 张玉明 刘新宇
Format Journal Article
LanguageEnglish
Published 01.05.2012
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ISSN1674-4926
DOI10.1088/1674-4926/33/5/054007

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Summary:We fabricated 88 nm gate-length InP-based InAlAs/InGaAs high electron mobility transistors(HEMTs) with a current gain cutoff frequency of 100 GHz and a maximum oscillation frequency of 185 GHz.The characteristics of HEMTs with side-etched region lengths(L_(Side)) of 300,412 and 1070 nm were analyzed.With the increase in L_(Side),the kink effect became notable in the DC characteristics,which resulted from the surface state and the effect of impact ionization.The kink effect was qualitatively explained through energy band diagrams,and then eased off by reducing the L_(Side).Meanwhile,the L_(Side) dependence of the radio frequency characteristics,which were influenced by the parasitic capacitance,as well as the parasitic resistance of the source and drain,was studied.This work will be of great importance in fabricating high-performance InP HEMTs.
Bibliography:Zhong Yinghui, Wang Xiantai, Su Yongbo, Cao Yuxiong, Jin Zhi, Zhang Yuming, and Liu Xinyu(1Microelectronics Institute, Xidian University, Xi'an 710071, China 2institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China)
11-5781/TN
We fabricated 88 nm gate-length InP-based InAlAs/InGaAs high electron mobility transistors(HEMTs) with a current gain cutoff frequency of 100 GHz and a maximum oscillation frequency of 185 GHz.The characteristics of HEMTs with side-etched region lengths(L_(Side)) of 300,412 and 1070 nm were analyzed.With the increase in L_(Side),the kink effect became notable in the DC characteristics,which resulted from the surface state and the effect of impact ionization.The kink effect was qualitatively explained through energy band diagrams,and then eased off by reducing the L_(Side).Meanwhile,the L_(Side) dependence of the radio frequency characteristics,which were influenced by the parasitic capacitance,as well as the parasitic resistance of the source and drain,was studied.This work will be of great importance in fabricating high-performance InP HEMTs.
kink effect HEMT gate recess InP InAlAs/InGaAs
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ISSN:1674-4926
DOI:10.1088/1674-4926/33/5/054007