High-power terahertz pulse sensor with overmoded structure
Based on the hot electron effect in a semiconductor, an overmoded resistive sensor for 0.3-0.4 THz band is investi-gated. The distribution of electromagnetic field components, voltage standing wave ratio （VSWR）, and the average electric field in the silicon block are obtained by using the three-dime...
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| Published in | Chinese physics B Vol. 23; no. 5; pp. 634 - 638 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.05.2014
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 1741-4199 |
| DOI | 10.1088/1674-1056/23/5/058701 |
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| Abstract | Based on the hot electron effect in a semiconductor, an overmoded resistive sensor for 0.3-0.4 THz band is investi-gated. The distribution of electromagnetic field components, voltage standing wave ratio （VSWR）, and the average electric field in the silicon block are obtained by using the three-dimensional finite-difference time-domain （FDTD） method. By adjusting several factors （such as the length, width, height and specific resistance of the silicon block） a novel sensor with optimal structural parameters that can be used as a power measurement device for high power terahertz pulse directly is proposed. The results show that the sensor has a relative sensitivity of about 0.24 kW 1, with a fluctuation of relative sensitivity of no more than ±22%, and the maximum of VSWR is 2.74 for 0.3-0.4 THz band. |
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| AbstractList | Based on the hot electron effect in a semiconductor, an overmoded resistive sensor for 0.3-0.4 THz band is investigated. The distribution of electromagnetic field components, voltage standing wave ratio (VSWR), and the average electric field in the silicon block are obtained by using the three-dimensional finite-difference time-domain (FDTD) method. By adjusting several factors (such as the length, width, height and specific resistance of the silicon block) a novel sensor with optimal structural parameters that can be used as a power measurement device for high power terahertz pulse directly is proposed. The results show that the sensor has a relative sensitivity of about 0.24 kW super(-1), with a fluctuation of relative sensitivity of no more than + or -22%, and the maximum of VSWR is 2.74 for 0.3-0.4 THz band. Based on the hot electron effect in a semiconductor, an overmoded resistive sensor for 0.3-0.4 THz band is investi-gated. The distribution of electromagnetic field components, voltage standing wave ratio （VSWR）, and the average electric field in the silicon block are obtained by using the three-dimensional finite-difference time-domain （FDTD） method. By adjusting several factors （such as the length, width, height and specific resistance of the silicon block） a novel sensor with optimal structural parameters that can be used as a power measurement device for high power terahertz pulse directly is proposed. The results show that the sensor has a relative sensitivity of about 0.24 kW 1, with a fluctuation of relative sensitivity of no more than ±22%, and the maximum of VSWR is 2.74 for 0.3-0.4 THz band. |
| Author | 王雪锋 王建国 王光强 李爽 熊正锋 |
| AuthorAffiliation | Northwest Institute of Nuclear Technology, Xi＇ an 710024, China Science and Technology on High Power Microwave Laboratory, Xi＇ an 710024, China School of Electronic and Information Engineering, Xi＇ an Jiaotong University, Xi＇ an 710049, China |
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| Cites_doi | 10.7498/aps.59.8459 10.1088/1674-1056/21/9/095203 10.3788/HPLPB20132502.0455 10.1109/22.989974 10.1109/TTHZ.2011.2151610 10.1063/1.3263260 10.7498/aps.62.150701 10.1109/74.979368 10.1088/1674-1056/22/5/059201 10.1049/iet-map:20070015 10.1063/1.4747161 10.1088/1674-1056/21/6/068402 10.1063/1.4799822 10.7498/aps.62.120703 10.7498/aps.60.030702 |
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| DocumentTitleAlternate | High-power terahertz pulse sensor with overmoded structure |
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| Notes | Wang Xue-Feng, Wang Jian-Guo, Wang Guang-Qiang, Li Shuang, Xiong Zheng-Feng（1.Northwest Institute of Nuclear Technology, Xi＇ an 710024, China ;2. Science and Technology on High Power Microwave Laboratory, Xi＇ an 710024, China ;3.School of Electronic and Information Engineering, Xi＇ an Jiaotong University, Xi＇ an 710049, China） hot electron effect, high power, terahertz pulse, overmoded structure Based on the hot electron effect in a semiconductor, an overmoded resistive sensor for 0.3-0.4 THz band is investi-gated. The distribution of electromagnetic field components, voltage standing wave ratio （VSWR）, and the average electric field in the silicon block are obtained by using the three-dimensional finite-difference time-domain （FDTD） method. By adjusting several factors （such as the length, width, height and specific resistance of the silicon block） a novel sensor with optimal structural parameters that can be used as a power measurement device for high power terahertz pulse directly is proposed. The results show that the sensor has a relative sensitivity of about 0.24 kW 1, with a fluctuation of relative sensitivity of no more than ±22%, and the maximum of VSWR is 2.74 for 0.3-0.4 THz band. 11-5639/O4 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| References | Li S (11) 2013; 62 Wang X F (17) 2013 Wang Y (20) 2005; 17 14 15 16 Wang G Q (10) 2013; 62 Li Y T (4) 2012; 21 Ge D B (19) 2006 Wang G Q (8) 2010; 59 1 2 5 7 Liu E K (13) 2011 Wang G Q (12) 2011; 60 9 Xu X (6) 2012; 21 Chen Z (3) 2013; 22 Zhang K Q (18) 2002 |
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| Snippet | Based on the hot electron effect in a semiconductor, an overmoded resistive sensor for 0.3-0.4 THz band is investi-gated. The distribution of electromagnetic... Based on the hot electron effect in a semiconductor, an overmoded resistive sensor for 0.3-0.4 THz band is investigated. The distribution of electromagnetic... |
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| SubjectTerms | Blocking Devices Electric fields Electric power generation Semiconductors Sensors Silicon Three dimensional VSWR 太赫兹脉冲 有限差分时域 模结构 热电子效应 电阻传感器 脉冲传感器 高功率 |
| Title | High-power terahertz pulse sensor with overmoded structure |
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