High-power terahertz pulse sensor with overmoded structure

Based on the hot electron effect in a semiconductor, an overmoded resistive sensor for 0.3-0.4 THz band is investi-gated. The distribution of electromagnetic field components, voltage standing wave ratio （VSWR）, and the average electric field in the silicon block are obtained by using the three-dime...

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Bibliographic Details
Published inChinese physics B Vol. 23; no. 5; pp. 634 - 638
Main Author 王雪锋 王建国 王光强 李爽 熊正锋
Format Journal Article
LanguageEnglish
Published 01.05.2014
Subjects
Blocking
Devices
Electric fields
Electric power generation
Semiconductors
Sensors
Silicon
Three dimensional
VSWR
太赫兹脉冲
有限差分时域
模结构
热电子效应
电阻传感器
脉冲传感器
高功率
Online AccessGet full text
ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/23/5/058701

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Summary:Based on the hot electron effect in a semiconductor, an overmoded resistive sensor for 0.3-0.4 THz band is investi-gated. The distribution of electromagnetic field components, voltage standing wave ratio （VSWR）, and the average electric field in the silicon block are obtained by using the three-dimensional finite-difference time-domain （FDTD） method. By adjusting several factors （such as the length, width, height and specific resistance of the silicon block） a novel sensor with optimal structural parameters that can be used as a power measurement device for high power terahertz pulse directly is proposed. The results show that the sensor has a relative sensitivity of about 0.24 kW 1, with a fluctuation of relative sensitivity of no more than ±22%, and the maximum of VSWR is 2.74 for 0.3-0.4 THz band.
Bibliography:Wang Xue-Feng, Wang Jian-Guo, Wang Guang-Qiang, Li Shuang, Xiong Zheng-Feng（1.Northwest Institute of Nuclear Technology, Xi＇ an 710024, China ;2. Science and Technology on High Power Microwave Laboratory, Xi＇ an 710024, China ;3.School of Electronic and Information Engineering, Xi＇ an Jiaotong University, Xi＇ an 710049, China）
hot electron effect, high power, terahertz pulse, overmoded structure
Based on the hot electron effect in a semiconductor, an overmoded resistive sensor for 0.3-0.4 THz band is investi-gated. The distribution of electromagnetic field components, voltage standing wave ratio （VSWR）, and the average electric field in the silicon block are obtained by using the three-dimensional finite-difference time-domain （FDTD） method. By adjusting several factors （such as the length, width, height and specific resistance of the silicon block） a novel sensor with optimal structural parameters that can be used as a power measurement device for high power terahertz pulse directly is proposed. The results show that the sensor has a relative sensitivity of about 0.24 kW 1, with a fluctuation of relative sensitivity of no more than ±22%, and the maximum of VSWR is 2.74 for 0.3-0.4 THz band.
11-5639/O4
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content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/23/5/058701