Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET

The hot carrier effect （HCE） of an ultra-deep sub-micron p-channel metal–oxide semiconductor field-effect transistor （pMOSFET） is investigated in this paper. Experiments indicate that the generation of positively charged interface states is the predominant mechanism in the case of the ultra-deep sub...

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Published inChinese physics B Vol. 22; no. 4; pp. 434 - 437
Main Author 雷晓艺 刘红侠 张凯 张月 郑雪峰 马晓华 郝跃
Format Journal Article
LanguageEnglish
Published 01.04.2013
Subjects
Carriers
Channels
Degradation
Mathematical models
Metal oxide semiconductors
Metal oxides
MOS场效应晶体管
pMOS器件
Semiconductors
Stresses
Voltage
半导体场效应晶体管
寿命预测模型
沟道宽度
热载流子效应
热载流子退化
超深亚微米
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/22/4/047304

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Summary:The hot carrier effect （HCE） of an ultra-deep sub-micron p-channel metal–oxide semiconductor field-effect transistor （pMOSFET） is investigated in this paper. Experiments indicate that the generation of positively charged interface states is the predominant mechanism in the case of the ultra-deep sub-micron pMOSFET. The relation of the pMOSFET hot carrier degradation to stress time （t）, channel width （W ）, channel length （L）, and stress voltage （Vd ） is then discussed. Based on the relation, a lifetime prediction model is proposed, which can predict the lifetime of the ultra-deep sub-micron pMOSFET accurately and reflect the influence of the factors on hot carrier degradation directly.
Bibliography:Lei Xiao-Yi , Liu Hong-Xia , Zhang Kai, Zhang Yue, Zheng Xue-Feng, Ma Xiao-Hua , Hao Yue（ a） a） Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education, State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies, School of Microelectronics, Xidian University, Xi’an 710071, China b） School of Technical Physics, Xidian University, Xi’an 710071, China
The hot carrier effect （HCE） of an ultra-deep sub-micron p-channel metal–oxide semiconductor field-effect transistor （pMOSFET） is investigated in this paper. Experiments indicate that the generation of positively charged interface states is the predominant mechanism in the case of the ultra-deep sub-micron pMOSFET. The relation of the pMOSFET hot carrier degradation to stress time （t）, channel width （W ）, channel length （L）, and stress voltage （Vd ） is then discussed. Based on the relation, a lifetime prediction model is proposed, which can predict the lifetime of the ultra-deep sub-micron pMOSFET accurately and reflect the influence of the factors on hot carrier degradation directly.
pMOSFETs; hot carrier effect （HCE）; degradation; lifetime modeling
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/4/047304