A simplified compact model of miniaturized cross-shaped CMOS integrated Hall devices
A simplified compact model for a miniaturized cross-shaped CMOS integrated Hall device is presented. The model has a simple circuit structure,only consisting of a passive network with eight non-linear resistors and four current-controlled voltage sources.It completely considers the following effects...
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| Published in | Journal of semiconductors Vol. 33; no. 8; pp. 60 - 66 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.08.2012
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-4926 |
| DOI | 10.1088/1674-4926/33/8/084005 |
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| Abstract | A simplified compact model for a miniaturized cross-shaped CMOS integrated Hall device is presented. The model has a simple circuit structure,only consisting of a passive network with eight non-linear resistors and four current-controlled voltage sources.It completely considers the following effects：non-linear conductivity,geometry dependence of sensitivity,temperature drift,lateral diffusion,and junction field effect.The model has been implemented in Verilog-A hardware description language and was successfully performed in a Cadence Spectre simulator.The simulation results are in good accordance with the classic experimental results reported in the literature. |
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| AbstractList | A simplified compact model for a miniaturized cross-shaped CMOS integrated Hall device is presented. The model has a simple circuit structure, only consisting of a passive network with eight non-linear resistors and four current-controlled voltage sources. It completely considers the following effects: non-linear conductivity, geometry dependence of sensitivity, temperature drift, lateral diffusion, and junction field effect. The model has been implemented in Verilog-A hardware description language and was successfully performed in a Cadence Spectre simulator. The simulation results are in good accordance with the classic experimental results reported in the literature. A simplified compact model for a miniaturized cross-shaped CMOS integrated Hall device is presented. The model has a simple circuit structure,only consisting of a passive network with eight non-linear resistors and four current-controlled voltage sources.It completely considers the following effects：non-linear conductivity,geometry dependence of sensitivity,temperature drift,lateral diffusion,and junction field effect.The model has been implemented in Verilog-A hardware description language and was successfully performed in a Cadence Spectre simulator.The simulation results are in good accordance with the classic experimental results reported in the literature. |
| Author | 黄海云 王德君 李文波 徐跃 秦会斌 胡永才 |
| AuthorAffiliation | School of Electronic Science and Technology, Faculty of Electronic Information and Electronic Engineering, Dalian University of Technology, Dalian 116024, China Institute of New Electron Devices, Hangzhou Dianzhi University, Hangzhou 310018, China College of Electronic Science ＆ Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China |
| Author_xml | – sequence: 1 fullname: 黄海云 王德君 李文波 徐跃 秦会斌 胡永才 |
| BookMark | eNqFUD1PwzAU9FAkSulPQAobS6g_E1tMVQUUqagDZbZcx2ktOXYau0jw60loxcDC9HTv7t7T3RUY-eANADcI3iPI-QwVJc2pwMWMkBmfQU4hZCMw_t1fgmmMdguh4Jz05Bhs5lm0TetsbU2V6dC0SqesCZVxWaizxnqr0rGzXwPbhRjzuFdtDxav67fM-mR2nUo9Xirnssp8WG3iNbiolYtmep4T8P70uFks89X6-WUxX-WaIJxyxSjEFVfIUIaJMBjpstpixmEttpjWhDFEeR-BkpLhshIFERVHRBd1QWClyQTcne62XTgcTUyysVEb55Q34RglokSUrCSQ9lJ2kv6E6Ewt2842qvuUCMqhPDmUJIeSJCGSy1N5ve_hj0_bpJINPnXKun_dt2f3Pvjdwfrd71uKOWeloOQbyGSCXg |
| CitedBy_id | crossref_primary_10_1088_1674_4926_43_3_032402 crossref_primary_10_3390_s151027359 |
| ContentType | Journal Article |
| DBID | 2RA 92L CQIGP W92 ~WA AAYXX CITATION 7SP 7TB 7U5 8FD FR3 L7M |
| DOI | 10.1088/1674-4926/33/8/084005 |
| DatabaseName | 维普期刊资源整合服务平台 中文科技期刊数据库-CALIS站点 维普中文期刊数据库 中文科技期刊数据库-工程技术 中文科技期刊数据库- 镜像站点 CrossRef Electronics & Communications Abstracts Mechanical & Transportation Engineering Abstracts Solid State and Superconductivity Abstracts Technology Research Database Engineering Research Database Advanced Technologies Database with Aerospace |
| DatabaseTitle | CrossRef Solid State and Superconductivity Abstracts Engineering Research Database Technology Research Database Mechanical & Transportation Engineering Abstracts Advanced Technologies Database with Aerospace Electronics & Communications Abstracts |
| DatabaseTitleList | Solid State and Superconductivity Abstracts |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering Physics |
| DocumentTitleAlternate | A simplified compact model of miniaturized cross-shaped CMOS integrated Hall devices |
| EndPage | 66 |
| ExternalDocumentID | 10_1088_1674_4926_33_8_084005 42885794 |
| GroupedDBID | 02O 042 1WK 2B. 2C0 2RA 4.4 5B3 5VR 5VS 7.M 92H 92I 92L 92R 93N AAGCD AAJIO AALHV AATNI ABHWH ACAFW ACGFO ACGFS ACHIP AEFHF AFUIB AFYNE AHSEE AKPSB ALMA_UNASSIGNED_HOLDINGS ASPBG AVWKF AZFZN BBWZM CCEZO CEBXE CHBEP CJUJL CQIGP CRLBU CUBFJ CW9 EBS EDWGO EJD EQZZN FA0 IJHAN IOP IZVLO JCGBZ KNG KOT M45 N5L NS0 NT- NT. PJBAE Q02 RIN RNS ROL RPA RW3 SY9 TCJ TGT W28 W92 ~WA -SI -S~ 5XA 5XJ AAYXX ACARI AEINN AERVB AGQPQ AOAED ARNYC CAJEI CITATION Q-- TGMPQ U1G U5S 7SP 7TB 7U5 8FD FR3 L7M |
| ID | FETCH-LOGICAL-c312t-a5402d8a1e45239e21c7db2580f9b24f355148005437527d9639d813c6f630dc3 |
| ISSN | 1674-4926 |
| IngestDate | Fri Sep 05 12:15:33 EDT 2025 Wed Oct 01 03:59:21 EDT 2025 Thu Apr 24 22:52:53 EDT 2025 Wed Feb 14 10:46:02 EST 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 8 |
| Language | English |
| LinkModel | OpenURL |
| MergedId | FETCHMERGED-LOGICAL-c312t-a5402d8a1e45239e21c7db2580f9b24f355148005437527d9639d813c6f630dc3 |
| Notes | Huang Haiyun, Wang Dejun, Li Wenbo, Xu Yue, Qin Huibin, Hu Yongcai 1 School of Electronic Science and Technology, Faculty of Electronic Information and Electronic Engineering, Dalian University of Technology, Dalian 116024, China 2 Institute of New Electron Devices, Hangzhou Dianzhi University, Hangzhou 310018, China 3College of Electronic Science ＆ Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China A simplified compact model for a miniaturized cross-shaped CMOS integrated Hall device is presented. The model has a simple circuit structure,only consisting of a passive network with eight non-linear resistors and four current-controlled voltage sources.It completely considers the following effects：non-linear conductivity,geometry dependence of sensitivity,temperature drift,lateral diffusion,and junction field effect.The model has been implemented in Verilog-A hardware description language and was successfully performed in a Cadence Spectre simulator.The simulation results are in good accordance with the classic experimental results reported in the literature. miniaturized Hall device; compact model; lateral diffusion; junction field effect 11-5781/TN ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
| PQID | 1439757304 |
| PQPubID | 23500 |
| PageCount | 7 |
| ParticipantIDs | proquest_miscellaneous_1439757304 crossref_primary_10_1088_1674_4926_33_8_084005 crossref_citationtrail_10_1088_1674_4926_33_8_084005 chongqing_primary_42885794 |
| ProviderPackageCode | CITATION AAYXX |
| PublicationCentury | 2000 |
| PublicationDate | 2012-08-01 |
| PublicationDateYYYYMMDD | 2012-08-01 |
| PublicationDate_xml | – month: 08 year: 2012 text: 2012-08-01 day: 01 |
| PublicationDecade | 2010 |
| PublicationTitle | Journal of semiconductors |
| PublicationTitleAlternate | Chinese Journal of Semiconductors |
| PublicationYear | 2012 |
| SSID | ssib009883400 ssib051367712 ssib004869572 ssj0067441 ssib016971655 ssib022315920 ssib004377404 ssib017478542 |
| Score | 1.8732239 |
| Snippet | A simplified compact model for a miniaturized cross-shaped CMOS integrated Hall device is presented. The model has a simple circuit structure,only consisting... A simplified compact model for a miniaturized cross-shaped CMOS integrated Hall device is presented. The model has a simple circuit structure, only consisting... |
| SourceID | proquest crossref chongqing |
| SourceType | Aggregation Database Enrichment Source Index Database Publisher |
| StartPage | 60 |
| SubjectTerms | Cadence CMOS Computer simulation Devices Mathematical models Nonlinearity Resistors Semiconductors Verilog-A Voltage 十字型 微型 紧凑型 集成 霍尔器件 |
| Title | A simplified compact model of miniaturized cross-shaped CMOS integrated Hall devices |
| URI | http://lib.cqvip.com/qk/94689X/201208/42885794.html https://www.proquest.com/docview/1439757304 |
| Volume | 33 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| journalDatabaseRights | – providerCode: PRVIOP databaseName: IOP Science Platform issn: 1674-4926 databaseCode: IOP dateStart: 20090101 customDbUrl: isFulltext: true dateEnd: 99991231 titleUrlDefault: https://iopscience.iop.org/ omitProxy: false ssIdentifier: ssj0067441 providerName: IOP Publishing |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnR3ZbtNAcBWKkOABQQHRcshI7FPkJt7Dnn20E1cFqRSJVuqbZa9tEgklhaQv_Si-kZm1HbsCcb1Y6z1Ga894jvUcjL0tgryyVRH5oQpKX4ki9Is8sn4hjK1QH9HGUnDy6Yfw5EK9v9SXo9H3gdfS9bY4sje_jCv5H6xiH-KVomT_AbM7oNiBbcQvXhHDeP0rHMfjzZI8wmvSI503ud02tW3cb_PlaklpO5c3NErS0N8s8is60j09-9QniijHJ_R_uqwc0xhqqzzVHOYcYmrExzyZ8VTxZM6NdD1zHoc8DWlCrDvU8dTwJOGgaCTRPIncopibYMzTiEPKIaHlSerGNDdTbpIxTTdzGqYGAo0cAMljMW6n48QUaBFIByqO3AYUbczE3brZmGYBLgwchClPwO3S4MMMTznIXQS6U46GMYeR8im54ZBzNyk0WgqFARtuShS0Ar2p6vKTqED2SqcWHVxs09n2sYuJQKt3qnsJufNbRFsNNHKwO-yuiMKQKma8O_vY8z-JyvTAvFUQGj2ISzYAUvXpEIOQ8nf1ccEB1TLoChLjPWpu-K306rym9HpRnx4Nt-4qs-6eoYtQA5js-iZSTmDSPBHlD1msV5-_olZ0Ww-7rYY43er8EXvYGkVe3FD4Yza6WeyzB4NUmfvsnnNVtpsn7Dz2eqr3Wqr3HNV769obUr03pHqPqN7rqd4jqvdaqn_KLo7T89mJ39YG8a0MxNbP0dIQJeRBpbSQphKBjcpCaJjWphCqlmQJABkkMtIiKlHOmBICacM6lNPSymdsb7VeVc-ZZwH1FSukKsqa0g_mpVB6qlQNKkfeVRyww91by66aHDBZRwkHTHWvMbNtVn0q7vIlc94dABlhIiNMZFJmkDWYOGBHu2UdyD8seNPhKEMBQH_18lW1vt6g7Y4mhUZBrQ5_t9EX7H7_Xb1ke9tv19Ur1Ke3xWtHxD8ALpGd5Q |
| linkProvider | IOP Publishing |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=A+simplified+compact+model+of+miniaturized+cross-shaped+CMOS+integrated+Hall+devices&rft.jtitle=%E5%8D%8A%E5%AF%BC%E4%BD%93%E5%AD%A6%E6%8A%A5&rft.au=%E9%BB%84%E6%B5%B7%E4%BA%91+%E7%8E%8B%E5%BE%B7%E5%90%9B+%E6%9D%8E%E6%96%87%E6%B3%A2+%E5%BE%90%E8%B7%83+%E7%A7%A6%E4%BC%9A%E6%96%8C+%E8%83%A1%E6%B0%B8%E6%89%8D&rft.date=2012-08-01&rft.issn=1674-4926&rft.volume=33&rft.issue=8&rft.spage=60&rft.epage=66&rft_id=info:doi/10.1088%2F1674-4926%2F33%2F8%2F084005&rft.externalDocID=42885794 |
| thumbnail_s | http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fimage.cqvip.com%2Fvip1000%2Fqk%2F94689X%2F94689X.jpg |