A simplified compact model of miniaturized cross-shaped CMOS integrated Hall devices

A simplified compact model for a miniaturized cross-shaped CMOS integrated Hall device is presented. The model has a simple circuit structure,only consisting of a passive network with eight non-linear resistors and four current-controlled voltage sources.It completely considers the following effects...

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Bibliographic Details
Published inJournal of semiconductors Vol. 33; no. 8; pp. 60 - 66
Main Author 黄海云 王德君 李文波 徐跃 秦会斌 胡永才
Format Journal Article
LanguageEnglish
Published 01.08.2012
Subjects
Cadence
CMOS
Computer simulation
Devices
Mathematical models
Nonlinearity
Resistors
Semiconductors
Verilog-A
Voltage
十字型
微型
紧凑型
集成
霍尔器件
Online AccessGet full text
ISSN1674-4926
DOI10.1088/1674-4926/33/8/084005

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Summary:A simplified compact model for a miniaturized cross-shaped CMOS integrated Hall device is presented. The model has a simple circuit structure,only consisting of a passive network with eight non-linear resistors and four current-controlled voltage sources.It completely considers the following effects：non-linear conductivity,geometry dependence of sensitivity,temperature drift,lateral diffusion,and junction field effect.The model has been implemented in Verilog-A hardware description language and was successfully performed in a Cadence Spectre simulator.The simulation results are in good accordance with the classic experimental results reported in the literature.
Bibliography:Huang Haiyun, Wang Dejun, Li Wenbo, Xu Yue, Qin Huibin, Hu Yongcai 1 School of Electronic Science and Technology, Faculty of Electronic Information and Electronic Engineering, Dalian University of Technology, Dalian 116024, China 2 Institute of New Electron Devices, Hangzhou Dianzhi University, Hangzhou 310018, China 3College of Electronic Science ＆ Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China
A simplified compact model for a miniaturized cross-shaped CMOS integrated Hall device is presented. The model has a simple circuit structure,only consisting of a passive network with eight non-linear resistors and four current-controlled voltage sources.It completely considers the following effects：non-linear conductivity,geometry dependence of sensitivity,temperature drift,lateral diffusion,and junction field effect.The model has been implemented in Verilog-A hardware description language and was successfully performed in a Cadence Spectre simulator.The simulation results are in good accordance with the classic experimental results reported in the literature.
miniaturized Hall device; compact model; lateral diffusion; junction field effect
11-5781/TN
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SourceType-Scholarly Journals-1
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ISSN:1674-4926
DOI:10.1088/1674-4926/33/8/084005