张栓勤, 赵. 刘. 黄. 胡. 张. (2012). The effects of substrate temperature on ZnO-based resistive random access memory devices. Chinese physics B, 21(6), 356-359. https://doi.org/10.1088/1674-1056/21/6/065201
Chicago Style (17th ed.) Citation张栓勤, 赵建伟 刘凤娟 黄海琴 胡佐富 张希清. "The Effects of Substrate Temperature on ZnO-based Resistive Random Access Memory Devices." Chinese Physics B 21, no. 6 (2012): 356-359. https://doi.org/10.1088/1674-1056/21/6/065201.
MLA (9th ed.) Citation张栓勤, 赵建伟 刘凤娟 黄海琴 胡佐富 张希清. "The Effects of Substrate Temperature on ZnO-based Resistive Random Access Memory Devices." Chinese Physics B, vol. 21, no. 6, 2012, pp. 356-359, https://doi.org/10.1088/1674-1056/21/6/065201.
Warning: These citations may not always be 100% accurate.