The effects of substrate temperature on ZnO-based resistive random access memory devices

Ag/ZnO/Zn/Pt structure resistive switching devices are prepared by radio frequency magnetron sputtering. The ZnO thin films are grown at room temperature and 400 ℃ substrate temperature, respectively. By comparing the data, we find that the latter device displayed better stability in the repetitive...

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Bibliographic Details
Published inChinese physics B Vol. 21; no. 6; pp. 356 - 359
Main Author 赵建伟 刘凤娟 黄海琴 胡佐富 张希清 张栓勤
Format Journal Article
LanguageEnglish
Published 01.06.2012
Subjects
Devices
Electric potential
High resistance
Magnetron sputtering
Memory devices
Silver
Switching
Time measurement
Zinc oxide
初始状态
基础
氧化锌
电阻式
衬底温度
装置
记忆体
随机存取
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/21/6/065201

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Summary:Ag/ZnO/Zn/Pt structure resistive switching devices are prepared by radio frequency magnetron sputtering. The ZnO thin films are grown at room temperature and 400 ℃ substrate temperature, respectively. By comparing the data, we find that the latter device displayed better stability in the repetitive switching cycle test, and the resistance ratio between a high resistance state and a low resistance state is correspondingly increased. After 104-s storage time measurement, this device exhibits a good retention property. Moreover, the operation voltages are very low： -0.3 V/-0.7 V （OFF state） and 0.3 V （ON state）. A high-voltage forming process in the initial state is not required, and a multistep reset process is demonstrated.
Bibliography:Ag/ZnO/Zn/Pt structure resistive switching devices are prepared by radio frequency magnetron sputtering. The ZnO thin films are grown at room temperature and 400 ℃ substrate temperature, respectively. By comparing the data, we find that the latter device displayed better stability in the repetitive switching cycle test, and the resistance ratio between a high resistance state and a low resistance state is correspondingly increased. After 104-s storage time measurement, this device exhibits a good retention property. Moreover, the operation voltages are very low： -0.3 V/-0.7 V （OFF state） and 0.3 V （ON state）. A high-voltage forming process in the initial state is not required, and a multistep reset process is demonstrated.
Zhao Jian-Wei, Liu Feng-Juan, Huang Hai-Qin, Hu Zuo-Fu, and Zhang Xi-Qing（ Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Opto-electronic Technology, Beijing Jiaotong University, Beijing 100044, China）
ZnO, resistive switching devices, magnetron sputtering
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/21/6/065201