Tungsten oxide nanostructures：controllable growth and field emission

Non-fully oxidized tungsten oxide（WO_（3-x）） nanostructures with controllable morphology were fabricated by adjusting the gas pressure in chemical vapor deposition.The comparative field emission（FE） measurements showed that the obtained W_（18）O_（49） nanowires have excellent FE property.The turn-on fi...

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Bibliographic Details
Published inJournal of semiconductors Vol. 33; no. 6; pp. 10 - 13
Main Author 岳双林 许婷婷 李伟 闫佶 一禾
Format Journal Article
LanguageEnglish
Published 01.06.2012
Subjects
Field emission
Finite element method
Nanocomposites
Nanomaterials
Nanostructure
Nanowires
Semiconductors
Stability
化学气相沉积
可控生长
场发射
完全氧化
气体压力
纳米结构
钨氧化物
高电流密度
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ISSN1674-4926
DOI10.1088/1674-4926/33/6/063002

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Summary:Non-fully oxidized tungsten oxide（WO_（3-x）） nanostructures with controllable morphology were fabricated by adjusting the gas pressure in chemical vapor deposition.The comparative field emission（FE） measurements showed that the obtained W_（18）O_（49） nanowires have excellent FE property.The turn-on field was 7.1 V/μm for 10μA/cm~2 and the observed highest current density was 4.05 mA/cm~2 at a field of 17.2 V/μm.Good electron emission reproducibility was also observed during thermal evaporation and desorption testing.
Bibliography:Non-fully oxidized tungsten oxide（WO_（3-x）） nanostructures with controllable morphology were fabricated by adjusting the gas pressure in chemical vapor deposition.The comparative field emission（FE） measurements showed that the obtained W_（18）O_（49） nanowires have excellent FE property.The turn-on field was 7.1 V/μm for 10μA/cm~2 and the observed highest current density was 4.05 mA/cm~2 at a field of 17.2 V/μm.Good electron emission reproducibility was also observed during thermal evaporation and desorption testing.
11-5781/TN
non-fully oxidized tungsten oxides field emission nanowire
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ISSN:1674-4926
DOI:10.1088/1674-4926/33/6/063002