樊继斌, 马. 刘. 匡. (2012). The influence and explanation of fringing-induced barrier lowering on sub-100 nm MOSFETs with high-k gate dielectrics. Chinese physics B, 21(5), 602-606. https://doi.org/10.1088/1674-1056/21/5/057305
Chicago Style (17th ed.) Citation樊继斌, 马飞 刘红侠 匡潜玮. "The Influence and Explanation of Fringing-induced Barrier Lowering on Sub-100 Nm MOSFETs with High-k Gate Dielectrics." Chinese Physics B 21, no. 5 (2012): 602-606. https://doi.org/10.1088/1674-1056/21/5/057305.
MLA (9th ed.) Citation樊继斌, 马飞 刘红侠 匡潜玮. "The Influence and Explanation of Fringing-induced Barrier Lowering on Sub-100 Nm MOSFETs with High-k Gate Dielectrics." Chinese Physics B, vol. 21, no. 5, 2012, pp. 602-606, https://doi.org/10.1088/1674-1056/21/5/057305.
Warning: These citations may not always be 100% accurate.