The influence and explanation of fringing-induced barrier lowering on sub-100 nm MOSFETs with high-k gate dielectrics

The fringing-induced barrier lowering（FIBL） effect of sub-100 nm MOSFETs with high-k gate dielectrics is investigated using a two-dimensional device simulator.An equivalent capacitance theory is proposed to explain the physics mechanism of the FIBL effect.The FIBL effect is enhanced and the short ch...

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Published inChinese physics B Vol. 21; no. 5; pp. 602 - 606
Main Author 马飞 刘红侠 匡潜玮 樊继斌
Format Journal Article
LanguageEnglish
Published 01.05.2012
Subjects
Barriers
Capacitance
Channels
Dielectrics
Drains
Equivalence
Gates
MOSFET
MOSFETs
Spacers
农业研究所
栅介质
物理机制
电容理论
纳米
轻掺杂漏
通道长度
Online AccessGet full text
ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/21/5/057305

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Summary:The fringing-induced barrier lowering（FIBL） effect of sub-100 nm MOSFETs with high-k gate dielectrics is investigated using a two-dimensional device simulator.An equivalent capacitance theory is proposed to explain the physics mechanism of the FIBL effect.The FIBL effect is enhanced and the short channel performance is degraded with increasing capacitance.Based on equivalent capacitance theory,the influences of channel length,junction depth,gate/lightly doped drain（LDD） overlap length,spacer material and spacer width on FIBL is thoroughly investigated.A stack gate dielectric is presented to suppress the FIBL effect.
Bibliography:The fringing-induced barrier lowering（FIBL） effect of sub-100 nm MOSFETs with high-k gate dielectrics is investigated using a two-dimensional device simulator.An equivalent capacitance theory is proposed to explain the physics mechanism of the FIBL effect.The FIBL effect is enhanced and the short channel performance is degraded with increasing capacitance.Based on equivalent capacitance theory,the influences of channel length,junction depth,gate/lightly doped drain（LDD） overlap length,spacer material and spacer width on FIBL is thoroughly investigated.A stack gate dielectric is presented to suppress the FIBL effect.
11-5639/O4
high-k gate dielectric, fringing-induced barrier lowering, stack gate dielectric, MOSFET
Ma Fei,Liu Hong-Xia,Kuang Qian-Wei,and Fan Ji-Bin Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Material and Devices,School of Microelectronics,Xidian University,Xi＇an 710071,China
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/21/5/057305