Alkaline barrier slurry applied in TSV chemical mechanical planarization

We have proposed a TSV （through-silicon-via） alkaline barrier slurry without any inhibitors for barrier CMP （chemical mechanical planarization） and investigated its CMP performance. The characteristics of removal rate and selectivity of Ti/SiO2/Cu were investigated under the same process conditions....

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Bibliographic Details
Published inJournal of semiconductors Vol. 35; no. 2; pp. 137 - 140
Main Author 马锁辉 王胜利 刘玉岭 王辰伟 杨琰
Format Journal Article
LanguageEnglish
Published 01.02.2014
Subjects
Barriers
CMP
Copper
Planarization
Selectivity
Semiconductors
Silicon dioxide
Slurries
Titanium
TSV
化学机械平坦化
化学机械研磨
去除速率
工艺条件
应用
碱性
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ISSN1674-4926
DOI10.1088/1674-4926/35/2/026002

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Summary:We have proposed a TSV （through-silicon-via） alkaline barrier slurry without any inhibitors for barrier CMP （chemical mechanical planarization） and investigated its CMP performance. The characteristics of removal rate and selectivity of Ti/SiO2/Cu were investigated under the same process conditions. The results obtained from 6.2 mm copper, titanium and silica show that copper has a low removal rate during barrier CMP by using this slurry, and Ti and SiO2 have high removal rate selectivity to Cu. Thus it may be helpful to modify the dishing. The TSV wafer results reveal that the alkaline barrier slurry has an obvious effect on surface topography correction, and can be applied in TSV barrier CME
Bibliography:11-5781/TN
We have proposed a TSV （through-silicon-via） alkaline barrier slurry without any inhibitors for barrier CMP （chemical mechanical planarization） and investigated its CMP performance. The characteristics of removal rate and selectivity of Ti/SiO2/Cu were investigated under the same process conditions. The results obtained from 6.2 mm copper, titanium and silica show that copper has a low removal rate during barrier CMP by using this slurry, and Ti and SiO2 have high removal rate selectivity to Cu. Thus it may be helpful to modify the dishing. The TSV wafer results reveal that the alkaline barrier slurry has an obvious effect on surface topography correction, and can be applied in TSV barrier CME
TSV; alkaline barrier slurry; removal rate; selectivity; dishing
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ISSN:1674-4926
DOI:10.1088/1674-4926/35/2/026002