The temperature dependence of single-event transients in 90-nm CMOS dual-well and triple-well NMOSFETs
This paper investigates the temperature dependence of single-event transients（SETs） in 90-nm complementary metat-oxide semiconductor（CMOS） dual-well and triple-well negative metal-oxide semiconductor field-effect transistors（NMOSFETs）.Technology computer-aided design（TCAD） three-dimensional（3D） simu...
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| Published in | Chinese physics B Vol. 22; no. 2; pp. 586 - 590 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.02.2013
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 1741-4199 |
| DOI | 10.1088/1674-1056/22/2/029401 |
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| Abstract | This paper investigates the temperature dependence of single-event transients（SETs） in 90-nm complementary metat-oxide semiconductor（CMOS） dual-well and triple-well negative metal-oxide semiconductor field-effect transistors（NMOSFETs）.Technology computer-aided design（TCAD） three-dimensional（3D） simulations show that the drain current pulse duration increases from 85 ps to 245 ps for triple-well but only increases from 65 ps to 98 ps for dual-well when the temperature increases from-55℃ to 125℃,which is closely correlated with the NMOSFET sources.This reveals that the pulse width increases with temperature in dual-well due to the weakening of the anti-amplification bipolar effect while increases with temperature in triple-well due to the enhancement of the bipolar amplification. |
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| AbstractList | This paper investigates the temperature dependence of single-event transients (SETs) in 90-nm complementary metal-oxide semiconductor (CMOS) dual-well and triple-well negative metal-oxide semiconductor field-effect transistors (NMOSFETs). Technology computer-aided design (TCAD) three-dimensional (3D) simulations show that the drain current pulse duration increases from 85 ps to 245 ps for triple-well but only increases from 65 ps to 98 ps for dual-well when the temperature increases from -55 [degrees]C to 125 [degrees]C, which is closely correlated with the NMOSFET sources. This reveals that the pulse width increases with temperature in dual-well due to the weakening of the anti-amplification bipolar effect while increases with temperature in triple-well due to the enhancement of the bipolar amplification. This paper investigates the temperature dependence of single-event transients（SETs） in 90-nm complementary metat-oxide semiconductor（CMOS） dual-well and triple-well negative metal-oxide semiconductor field-effect transistors（NMOSFETs）.Technology computer-aided design（TCAD） three-dimensional（3D） simulations show that the drain current pulse duration increases from 85 ps to 245 ps for triple-well but only increases from 65 ps to 98 ps for dual-well when the temperature increases from-55℃ to 125℃,which is closely correlated with the NMOSFET sources.This reveals that the pulse width increases with temperature in dual-well due to the weakening of the anti-amplification bipolar effect while increases with temperature in triple-well due to the enhancement of the bipolar amplification. |
| Author | 李达维 秦军瑞 陈书明 |
| AuthorAffiliation | College of Computer, National University of Defense Technology, Changsha 410073, China |
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| Cites_doi | 10.1109/TNS.2008.2005831 10.1109/TNS.2008.2006980 10.1109/TNS.2009.2022267 10.7498/aps.61.096102 10.1109/TNS.2009.2034150 10.1088/1674-1056/20/12/129401 10.7498/aps.53.194 10.1088/1674-1056/21/2/029401 10.1109/JSSC.2004.836338 |
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| DocumentTitleAlternate | The temperature dependence of single-event transients in 90-nm CMOS dual-well and triple-well NMOSFETs |
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| Notes | This paper investigates the temperature dependence of single-event transients（SETs） in 90-nm complementary metat-oxide semiconductor（CMOS） dual-well and triple-well negative metal-oxide semiconductor field-effect transistors（NMOSFETs）.Technology computer-aided design（TCAD） three-dimensional（3D） simulations show that the drain current pulse duration increases from 85 ps to 245 ps for triple-well but only increases from 65 ps to 98 ps for dual-well when the temperature increases from-55℃ to 125℃,which is closely correlated with the NMOSFET sources.This reveals that the pulse width increases with temperature in dual-well due to the weakening of the anti-amplification bipolar effect while increases with temperature in triple-well due to the enhancement of the bipolar amplification. single event transient,temperature dependence,dual-well,triple-well,N^＋ deep well Li Da-Wei , Qin Jun-Rui , Chen Shu-Ming（ College of Computer, National University of Det＇ense Technology, Changsha 410073, China） 11-5639/O4 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| References | Atkinson N M (11) 2010 5 6 7 Liu Z (2) 2009; 59 8 Qin J R (3) 2011; 20 9 Turowski M (12) 2007 He C H (1) 2004; 53 Qin J R (4) 2012; 21 Liu B W (10) 2012; 61 |
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| Snippet | This paper investigates the temperature dependence of single-event transients（SETs） in 90-nm complementary metat-oxide semiconductor（CMOS） dual-well and... This paper investigates the temperature dependence of single-event transients (SETs) in 90-nm complementary metal-oxide semiconductor (CMOS) dual-well and... |
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| SubjectTerms | CMOS Computer aided design Drains Metal oxide semiconductors Metal oxides NMOS场效应晶体管 Semiconductors Temperature dependence Three dimensional 单事件 双阱 温度依赖性 瞬变 纳米 金属氧化物半导体场效应晶体管 |
| Title | The temperature dependence of single-event transients in 90-nm CMOS dual-well and triple-well NMOSFETs |
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