The temperature dependence of single-event transients in 90-nm CMOS dual-well and triple-well NMOSFETs

This paper investigates the temperature dependence of single-event transients（SETs） in 90-nm complementary metat-oxide semiconductor（CMOS） dual-well and triple-well negative metal-oxide semiconductor field-effect transistors（NMOSFETs）.Technology computer-aided design（TCAD） three-dimensional（3D） simu...

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Published inChinese physics B Vol. 22; no. 2; pp. 586 - 590
Main Author 李达维 秦军瑞 陈书明
Format Journal Article
LanguageEnglish
Published 01.02.2013
Subjects
CMOS
Computer aided design
Drains
Metal oxide semiconductors
Metal oxides
NMOS场效应晶体管
Semiconductors
Temperature dependence
Three dimensional
单事件
双阱
温度依赖性
瞬变
纳米
金属氧化物半导体场效应晶体管
Online AccessGet full text
ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/22/2/029401

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Summary:This paper investigates the temperature dependence of single-event transients（SETs） in 90-nm complementary metat-oxide semiconductor（CMOS） dual-well and triple-well negative metal-oxide semiconductor field-effect transistors（NMOSFETs）.Technology computer-aided design（TCAD） three-dimensional（3D） simulations show that the drain current pulse duration increases from 85 ps to 245 ps for triple-well but only increases from 65 ps to 98 ps for dual-well when the temperature increases from-55℃ to 125℃,which is closely correlated with the NMOSFET sources.This reveals that the pulse width increases with temperature in dual-well due to the weakening of the anti-amplification bipolar effect while increases with temperature in triple-well due to the enhancement of the bipolar amplification.
Bibliography:This paper investigates the temperature dependence of single-event transients（SETs） in 90-nm complementary metat-oxide semiconductor（CMOS） dual-well and triple-well negative metal-oxide semiconductor field-effect transistors（NMOSFETs）.Technology computer-aided design（TCAD） three-dimensional（3D） simulations show that the drain current pulse duration increases from 85 ps to 245 ps for triple-well but only increases from 65 ps to 98 ps for dual-well when the temperature increases from-55℃ to 125℃,which is closely correlated with the NMOSFET sources.This reveals that the pulse width increases with temperature in dual-well due to the weakening of the anti-amplification bipolar effect while increases with temperature in triple-well due to the enhancement of the bipolar amplification.
single event transient,temperature dependence,dual-well,triple-well,N^＋ deep well
Li Da-Wei , Qin Jun-Rui , Chen Shu-Ming（ College of Computer, National University of Det＇ense Technology, Changsha 410073, China）
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/2/029401