APA (7th ed.) Citation

陈书明, 李. 秦. (2013). The temperature dependence of single-event transients in 90-nm CMOS dual-well and triple-well NMOSFETs. Chinese physics B, 22(2), 586-590. https://doi.org/10.1088/1674-1056/22/2/029401

Chicago Style (17th ed.) Citation

陈书明, 李达维 秦军瑞. "The Temperature Dependence of Single-event Transients in 90-nm CMOS Dual-well and Triple-well NMOSFETs." Chinese Physics B 22, no. 2 (2013): 586-590. https://doi.org/10.1088/1674-1056/22/2/029401.

MLA (9th ed.) Citation

陈书明, 李达维 秦军瑞. "The Temperature Dependence of Single-event Transients in 90-nm CMOS Dual-well and Triple-well NMOSFETs." Chinese Physics B, vol. 22, no. 2, 2013, pp. 586-590, https://doi.org/10.1088/1674-1056/22/2/029401.