Positive gate-bias temperature instability of ZnO thin-film transistor

The positive gate-bias temperature instability of a radio frequency （RF） sputtered ZnO thin-film transistor （ZnO TFT） is investigated. Under positive gate-bias stress, the saturation drain current and OFF-state current decrease, and the threshold voltage shifts toward the positive direction. The str...

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Bibliographic Details
Published inChinese physics B Vol. 23; no. 6; pp. 602 - 607
Main Author 刘玉荣 苏晶 黎沛涛 姚若河
Format Journal Article
LanguageEnglish
Published 01.06.2014
Subjects
Instability
Mathematical analysis
Semiconductor devices
Stability
Stresses
Thin film transistors
Threshold voltage
Zinc oxide
不稳定性
栅偏压
氧化锌
温度
电压偏移
电压特性曲线
薄膜晶体管
阈值电压
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/23/6/068501

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Summary:The positive gate-bias temperature instability of a radio frequency （RF） sputtered ZnO thin-film transistor （ZnO TFT） is investigated. Under positive gate-bias stress, the saturation drain current and OFF-state current decrease, and the threshold voltage shifts toward the positive direction. The stress amplitude and stress temperature are considered as important factors in threshold-voltage instability, and the time dependences of threshold voltage shift under various bias temperature stress conditions could be described by a stretched-exponential equation. Based on the analysis of hysteresis behaviors in current- voltage and capacitance-voltage characteristics before and after the gate-bias stress, it can be clarified that the threshold- voltage shift is predominantly attributed to the trapping of negative charge carriers in the defect states located at the gate- dielectric/channel interface.
Bibliography:Liu Yu-Rong, Su Jing, Lai Pei-Tao, Yao Ruo-He （ a） The School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China b）National Enginenng Technology Research Center for Mobile Ultrasonic Detection, South China University of Technology, Guangzhou 510640, China c） Department of Electrical and Electronic Engineering, the University of Hong Kong, Pokfulam Rd., Hong Kong, China
thin-film transistors （TFTs）, zinc oxide, gate-bias instability, threshold-voltage shift
The positive gate-bias temperature instability of a radio frequency （RF） sputtered ZnO thin-film transistor （ZnO TFT） is investigated. Under positive gate-bias stress, the saturation drain current and OFF-state current decrease, and the threshold voltage shifts toward the positive direction. The stress amplitude and stress temperature are considered as important factors in threshold-voltage instability, and the time dependences of threshold voltage shift under various bias temperature stress conditions could be described by a stretched-exponential equation. Based on the analysis of hysteresis behaviors in current- voltage and capacitance-voltage characteristics before and after the gate-bias stress, it can be clarified that the threshold- voltage shift is predominantly attributed to the trapping of negative charge carriers in the defect states located at the gate- dielectric/channel interface.
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
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content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/23/6/068501