Graphene films grown on sapphire substrates via solid source molecular beam epitaxy

A method for growing graphene on a sapphire substrate by depositing an SiC buffer layer and then annealing at high temperature in solid source molecular beam epitaxy（SSMBE） equipment was presented.The structural and electronic properties of the samples were characterized by reflection high energy di...

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Bibliographic Details
Published inChinese physics B Vol. 21; no. 5; pp. 591 - 595
Main Author 唐军 康朝阳 李利民 刘忠良 闫文盛 韦世强 徐彭寿
Format Journal Article
LanguageEnglish
Published 01.05.2012
Subjects
Annealing
Diffraction
Fine structure
Graphene
Molecular beam epitaxy
NEXAFS
Sapphire
Silicon carbide
Stacking
X-rays
分子束外延技术
固态源
生长
石墨层
蓝宝石衬底
薄膜
近边X射线吸收精细结构
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/21/5/057303

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Summary:A method for growing graphene on a sapphire substrate by depositing an SiC buffer layer and then annealing at high temperature in solid source molecular beam epitaxy（SSMBE） equipment was presented.The structural and electronic properties of the samples were characterized by reflection high energy diffraction（RHEED）,X-ray diffraction Φ scans,Raman spectroscopy,and near edge X-ray absorption fine structure（NEXAFS） spectroscopy.The results of the RHEED and Φ scan,as well as the Raman spectra,showed that an epitaxial hexagonal α-SiC layer was grown on the sapphire substrate.The results of the Raman and NEXAFS spectra revealed that the graphene films with the AB Bernal stacking structure were formed on the sapphire substrate after annealing.The layer number of the graphene was between four and five,and the thickness of the unreacted SiC layer was about 1-1.5 nm.
Bibliography:Tang Jun ,Kang Chao-Yang,Li Li-Min ,Liu Zhong-Liang ,Yan Wen-Sheng ,Wei Shi-Qiang ,and Xu Peng-Shou a） National Synchrotron Radiation Laboratory,University of Science and Technology of China,Hefei 230029,China b） Hefei IRICO Epilight Technology Co.,Ltd.,Hefei 230011,China c） School of Physics and Electronic Information,Huaibei Normal University,Huaibei 235000,China
graphene; SiC layer; sapphire substrate
11-5639/O4
A method for growing graphene on a sapphire substrate by depositing an SiC buffer layer and then annealing at high temperature in solid source molecular beam epitaxy（SSMBE） equipment was presented.The structural and electronic properties of the samples were characterized by reflection high energy diffraction（RHEED）,X-ray diffraction Φ scans,Raman spectroscopy,and near edge X-ray absorption fine structure（NEXAFS） spectroscopy.The results of the RHEED and Φ scan,as well as the Raman spectra,showed that an epitaxial hexagonal α-SiC layer was grown on the sapphire substrate.The results of the Raman and NEXAFS spectra revealed that the graphene films with the AB Bernal stacking structure were formed on the sapphire substrate after annealing.The layer number of the graphene was between four and five,and the thickness of the unreacted SiC layer was about 1-1.5 nm.
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ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/21/5/057303