SPICE modeling of flux-controlled unipolar memristive devices

Unipolar memristive devices are an important kind of resistive switching devices. However, few circuit models of them have been proposed. In this paper, we propose the SPICE modeling of flux-controlled unipolar memristive devices based on the memristance versus state map. Using our model, the flux t...

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Published inChinese physics B Vol. 22; no. 7; pp. 596 - 601
Main Author 方旭东 唐玉华 吴俊杰 朱玄 周静 黄达
Format Journal Article
LanguageEnglish
Published 01.07.2013
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/22/7/078901

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Summary:Unipolar memristive devices are an important kind of resistive switching devices. However, few circuit models of them have been proposed. In this paper, we propose the SPICE modeling of flux-controlled unipolar memristive devices based on the memristance versus state map. Using our model, the flux thresholds, ON and OFF resistance, and compliance current can easily be set as model parameters. We simulate the model in HSPICE using model parameters abstracted from real devices, and the simulation results show that the proposed model caters to the real device data very well, thus demonstrating that the model is correct. Using the same modeling methodology, the SPICE model of charge-controlled unipolar memristive devices could also be developed. The proposed model could be used to model resistive memory cells, logical gates as well as synapses in artificial neural networks.
Bibliography:Fang Xu-Dong, Tang Yu-Hua, Wu Jun-Jie, Zhu Xuan, Zhou Jing, and Huang Da a) State Key Laboratory of High Performance Computing, School of Computer, National University of Defense Technology, Changsha 410073, China b) Department of Computer Science and Technology, School of Computer, National University of Defense Technology, Changsha 410073, China
unipolar memristive devices;memristive;SPICE model
11-5639/O4
Unipolar memristive devices are an important kind of resistive switching devices. However, few circuit models of them have been proposed. In this paper, we propose the SPICE modeling of flux-controlled unipolar memristive devices based on the memristance versus state map. Using our model, the flux thresholds, ON and OFF resistance, and compliance current can easily be set as model parameters. We simulate the model in HSPICE using model parameters abstracted from real devices, and the simulation results show that the proposed model caters to the real device data very well, thus demonstrating that the model is correct. Using the same modeling methodology, the SPICE model of charge-controlled unipolar memristive devices could also be developed. The proposed model could be used to model resistive memory cells, logical gates as well as synapses in artificial neural networks.
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ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/7/078901