On-current Modeling of 70-nm PMOSFETs Dependent on Hot-carrier Stress Bias Conditions

Based on the drain-avalanche-hot-carrier (DAHC-) mechanism, a stress-bias-dependent on-current model is proposed for 70-nm p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) by using only one device parameter: channel length variation (ΔLch). The proposed model describes the inf...

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Bibliographic Details
Published inJournal of semiconductor technology and science Vol. 18; no. 2; pp. 131 - 138
Main Authors Choi, Woo Young, Lim, In Eui, Jhon, Heesauk, Yoon, Gyuhan
Format Journal Article
LanguageEnglish
Published 대한전자공학회 01.04.2018
Subjects
전기공학
PMOSFET
modeling
bias dependency
HEIP
reliability
Online AccessGet full text
ISSN1598-1657
2233-4866
DOI10.5573/JSTS.2018.18.2.131

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Summary:Based on the drain-avalanche-hot-carrier (DAHC-) mechanism, a stress-bias-dependent on-current model is proposed for 70-nm p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) by using only one device parameter: channel length variation (ΔLch). The proposed model describes the influence of drain and gate stress bias on the on-current of PMOSFETs successfully. It is a simple and effective method of predicting the on-current variation for more reliable circuit operation. KCI Citation Count: 1
ISSN:1598-1657
2233-4866
DOI:10.5573/JSTS.2018.18.2.131