Emerging Memory Technologies: Recent Trends and Prospects
This tutorial introduces the basics of emerging nonvolatile memory (NVM) technologies including spin-transfer-torque magnetic random access memory (STTMRAM), phase-change random access memory (PCRAM), and resistive random access memory (RRAM). Emerging NVM cell characteristics are summarized, and de...
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| Published in | IEEE solid state circuits magazine Vol. 8; no. 2; pp. 43 - 56 |
|---|---|
| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
Piscataway
IEEE
01.01.2016
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subjects | |
| Online Access | Get full text |
| ISSN | 1943-0582 1943-0590 |
| DOI | 10.1109/MSSC.2016.2546199 |
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| Abstract | This tutorial introduces the basics of emerging nonvolatile memory (NVM) technologies including spin-transfer-torque magnetic random access memory (STTMRAM), phase-change random access memory (PCRAM), and resistive random access memory (RRAM). Emerging NVM cell characteristics are summarized, and device-level engineering trends are discussed. Emerging NVM array architectures are introduced, including the one-transistor-one-resistor (1T1R) array and the cross-point array with selectors. Design challenges such as scaling the write current and minimizing the sneak path current in cross-point array are analyzed. Recent progress on megabit-to gigabit-level prototype chip demonstrations is summarized. Finally, the prospective applications of emerging NVM are discussed, ranging from the last-level cache to the storage-class memory in the memory hierarchy. Topics of three-dimensional (3D) integration and radiation-hard NVM are discussed. Novel applications beyond the conventional memory applications are also surveyed, including physical unclonable function for hardware security, reconfigurable routing switch for field-programmable gate array (FPGA), logic-in-memory and nonvolatile cache/register/flip-flop for nonvolatile processor, and synaptic device for neuro-inspired computing. |
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| AbstractList | This tutorial introduces the basics of emerging nonvolatile memory (NVM) technologies including spin-transfer-torque magnetic random access memory (STTMRAM), phase-change random access memory (PCRAM), and resistive random access memory (RRAM). Emerging NVM cell characteristics are summarized, and device-level engineering trends are discussed. Emerging NVM array architectures are introduced, including the onetransistor?one-resistor (1T1R) array and the cross-point array with selectors. Design challenges such as scaling the write current and minimizing the sneak path current in cross-point array are analyzed. Recent progress on megabit-to gigabit-level prototype chip demonstrations is summarized. Finally, the prospective applications of emerging NVM are discussed, ranging from the last-level cache to the storage-class memory in the memory hierarchy. Topics of three-dimensional (3D) integration and radiation-hard NVM are discussed. Novel applications beyond the conventional memory applications are also surveyed, including physical unclonable function for hardware security, reconfigurable routing switch for field-programmable gate array (FPGA), logic-in-memory and nonvolatile cache/register/flip-flop for nonvolatile processor, and synaptic device for neuro-inspired computing. This tutorial introduces the basics of emerging nonvolatile memory (NVM) technologies including spin-transfer-torque magnetic random access memory (STTMRAM), phase-change random access memory (PCRAM), and resistive random access memory (RRAM). Emerging NVM cell characteristics are summarized, and device-level engineering trends are discussed. Emerging NVM array architectures are introduced, including the one-transistor-one-resistor (1T1R) array and the cross-point array with selectors. Design challenges such as scaling the write current and minimizing the sneak path current in cross-point array are analyzed. Recent progress on megabit-to gigabit-level prototype chip demonstrations is summarized. Finally, the prospective applications of emerging NVM are discussed, ranging from the last-level cache to the storage-class memory in the memory hierarchy. Topics of three-dimensional (3D) integration and radiation-hard NVM are discussed. Novel applications beyond the conventional memory applications are also surveyed, including physical unclonable function for hardware security, reconfigurable routing switch for field-programmable gate array (FPGA), logic-in-memory and nonvolatile cache/register/flip-flop for nonvolatile processor, and synaptic device for neuro-inspired computing. |
| Author | Chen, Pai-Yu Yu, Shimeng |
| Author_xml | – sequence: 1 givenname: Shimeng surname: Yu fullname: Yu, Shimeng email: shimengy@asu.edu organization: School of Electrical, Computer, and Energy Engineering, Arizona State University, Arizona USA – sequence: 2 givenname: Pai-Yu surname: Chen fullname: Chen, Pai-Yu organization: School of Electrical, Computer, and Energy Engineering, Arizona State University, Arizona USA |
| BookMark | eNp9kD9PwzAQxS1UJNrCB0AskVhYUnxOHMdsqCp_pFYgmt1ynGtJldjFTod-e1IVdejA9G54v7t3b0QG1lkk5BboBIDKx8VyOZ0wCtmE8TQDKS_IEGSaxJRLOjjNObsioxA2lGY85WxI5KxFv67tOlpg6_w-KtB8W9e4dY3hKfpCg7aLCo-2CpG2VfTpXdii6cI1uVzpJuDNn45J8TIrpm_x_OP1ffo8j01CRReDNtAn7KWSkrMM8xKErjIuE0NLWq6S0pgMSpPzTBstWMVYTnUiMyqg1MmYPBzXbr372WHoVFsHg02jLbpdUJAzzpkEyHvr_Zl143be9uEUCCmphBRk74Kjy_SfBI8rtfV1q_1eAVWHLtWhS3XoUv112TPijDF1p7va2c7ruvmXvDuSNSKeLolUcpqL5BchVIH5 |
| CODEN | SMCOCC |
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| Cites_doi | 10.1109/JPROC.2012.2190369 10.1109/IEDM.2015.7409718 10.1109/ISSCC.2010.5433916 10.1109/ISSCC.2016.7417941 10.1109/ISSCC.2014.6757459 10.1109/ISSCC.2015.7063054 10.1109/IEDM.2015.7409789 10.1109/ISSCC.2011.5746281 10.1145/2464996.2465004 10.1145/2333660.2333712 10.1063/1.4870917 10.1109/IEDM.2007.4418973 10.1109/ISSCC.2012.6177078 10.1038/nnano.2015.29 10.1109/IEDM.2007.4419061 10.1063/1.4875748 10.1109/IEDM.2014.7046994 10.1109/VLSIT.2014.6894366 10.1109/ISSCC.2012.6177067 10.1109/IEDM.2013.6724732 10.1109/LED.2014.2385870 10.1109/ISSCC.2014.6757458 10.1109/IEDM.2015.7409668 10.1116/1.4889999 10.1109/JPROC.2010.2070050 10.1109/IEDM.2012.6478967 10.1109/IEDM.2011.6131654 10.1109/IEDM.2011.6131478 10.1109/LED.2015.2496257 10.1109/ISSCC.2014.6757460 10.1109/TED.2010.2062187 10.1109/ISSCC.2015.7062960 10.1109/ISSCC.2013.6487696 10.1109/ISSCC.2014.6757457 10.1109/TED.2012.2231683 10.1109/TVLSI.2010.2063444 10.1088/0957-4484/24/38/382001 10.1145/1669112.1669117 10.1109/IEDM.2011.6131653 10.1109/IEDM.2014.7046995 10.1145/2228360.2228447 10.1109/ISSCC.2012.6176872 10.1109/VLSIT.2007.4339708 10.1109/IEDM.2008.4796680 10.1109/TNS.2014.2321833 10.1109/ISSCC.2010.5433948 10.1109/JSSC.2012.2235013 10.1109/VLSIT.2010.5556229 10.1109/ISSCC.2015.7062963 10.1147/rd.524.0439 10.1109/VLSIC.2010.5560286 10.1109/TED.2015.2492421 10.1109/JETCAS.2015.2426531 10.1109/LED.2010.2078794 |
| ContentType | Journal Article |
| Copyright | Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016 |
| Copyright_xml | – notice: Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016 |
| DBID | 97E RIA RIE AAYXX CITATION 7SP 8FD L7M |
| DOI | 10.1109/MSSC.2016.2546199 |
| DatabaseName | IEEE All-Society Periodicals Package (ASPP) 2005–Present IEEE All-Society Periodicals Package (ASPP) 1998–Present IEEE Electronic Library (IEL) CrossRef Electronics & Communications Abstracts Technology Research Database Advanced Technologies Database with Aerospace |
| DatabaseTitle | CrossRef Technology Research Database Advanced Technologies Database with Aerospace Electronics & Communications Abstracts |
| DatabaseTitleList | Technology Research Database Technology Research Database |
| Database_xml | – sequence: 1 dbid: RIE name: IEEE Xplore url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/ sourceTypes: Publisher |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering |
| EISSN | 1943-0590 |
| EndPage | 56 |
| ExternalDocumentID | 4098367851 10_1109_MSSC_2016_2546199 7495087 |
| Genre | orig-research |
| GroupedDBID | 0R~ 29I 4.4 5VS 6IK 97E AAJGR AARMG AASAJ AAWTH ABAZT ABQJQ ABVLG AETIX AGQYO AGSQL AHBIQ AKJIK AKQYR ALMA_UNASSIGNED_HOLDINGS BEFXN BFFAM BGNUA BKEBE BPEOZ EBS EJD HZ~ IFIPE IPLJI JAVBF M43 O9- OCL RIA RIE RNS AAYXX CITATION 7SP 8FD L7M RIG |
| ID | FETCH-LOGICAL-c307t-1ac11101acd99526e8b17ad6593c0b0bf3bcc61bc856aca72d2280a396071ba3 |
| IEDL.DBID | RIE |
| ISSN | 1943-0582 |
| IngestDate | Sun Sep 28 11:30:46 EDT 2025 Mon Jun 30 03:19:38 EDT 2025 Wed Oct 01 03:50:46 EDT 2025 Thu Apr 24 22:57:15 EDT 2025 Wed Aug 27 02:49:47 EDT 2025 |
| IsPeerReviewed | false |
| IsScholarly | false |
| Issue | 2 |
| Language | English |
| License | https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-c307t-1ac11101acd99526e8b17ad6593c0b0bf3bcc61bc856aca72d2280a396071ba3 |
| Notes | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 content type line 23 |
| PQID | 1799091419 |
| PQPubID | 85511 |
| PageCount | 14 |
| ParticipantIDs | crossref_primary_10_1109_MSSC_2016_2546199 ieee_primary_7495087 proquest_journals_1799091419 crossref_citationtrail_10_1109_MSSC_2016_2546199 proquest_miscellaneous_1825529118 |
| ProviderPackageCode | CITATION AAYXX |
| PublicationCentury | 2000 |
| PublicationDate | 20160101 |
| PublicationDateYYYYMMDD | 2016-01-01 |
| PublicationDate_xml | – month: 01 year: 2016 text: 20160101 day: 01 |
| PublicationDecade | 2010 |
| PublicationPlace | Piscataway |
| PublicationPlace_xml | – name: Piscataway |
| PublicationTitle | IEEE solid state circuits magazine |
| PublicationTitleAbbrev | MSSC |
| PublicationYear | 2016 |
| Publisher | IEEE The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher_xml | – name: IEEE – name: The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| References | ref57 ref56 ref12 ref59 ref15 ref58 ref14 ref53 ref52 ref11 ref54 ref10 burr (ref32) 0 ref19 ref18 yu (ref44) 0 hayakawa (ref64) 0 lee (ref72) 0 wong (ref4) 0; 100 ref46 ref45 ref47 chen (ref20) 0 ref42 ref41 chang (ref48) 0 (ref50) 0 ref8 ref7 ref9 ref3 ref6 ref5 jo (ref36) 0 jang (ref55) 0 ref34 ref37 kau (ref35) 0 ref75 ref31 ref74 ref30 ref33 ref1 ref39 chang (ref49) 0 ref38 cheng (ref13) 0 ref71 (ref51) 2015 ref70 ref73 liang (ref16) 0 ref68 ref24 ref67 (ref23) 2011 ref26 ref69 ref25 ref63 ref66 ref65 ref21 li (ref22) 0 ref28 ref27 ref29 (ref40) 2015 khwa (ref17) 0 yu (ref43) 0 chen (ref61) 0 ref60 ref62 zhu (ref2) 0; 96 |
| References_xml | – volume: 100 start-page: 1951 year: 0 ident: ref4 article-title: Metal-oxide RRAM publication-title: Proc IEEE doi: 10.1109/JPROC.2012.2190369 – ident: ref75 doi: 10.1109/IEDM.2015.7409718 – ident: ref45 doi: 10.1109/ISSCC.2010.5433916 – ident: ref58 doi: 10.1109/ISSCC.2016.7417941 – start-page: 14t year: 0 ident: ref64 article-title: Highly reliable TaOx ReRAM with centralized filament for 28-nm embedded application publication-title: Proc IEEE Symp VLSI Technology – ident: ref8 doi: 10.1109/ISSCC.2014.6757459 – start-page: 66t year: 0 ident: ref32 article-title: Recovery dynamics and fast (sub-50ns) read operation with access devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC) publication-title: Proc IEEE Symp VLSI Technology – ident: ref70 doi: 10.1109/ISSCC.2015.7063054 – ident: ref12 doi: 10.1109/IEDM.2015.7409789 – ident: ref47 doi: 10.1109/ISSCC.2011.5746281 – ident: ref6 doi: 10.1145/2464996.2465004 – start-page: 31.1.1 year: 0 ident: ref13 article-title: A thermally robust phase change memory by engineering the Ge/N concentration in (Ge, N)xSbyTez phase change material publication-title: Proc IEEE Int Electron Devices Meeting – ident: ref28 doi: 10.1145/2333660.2333712 – ident: ref10 doi: 10.1063/1.4870917 – ident: ref14 doi: 10.1109/IEDM.2007.4418973 – start-page: 1 year: 0 ident: ref35 article-title: A stackable cross point phase change memory publication-title: Proc IEEE Int Electron Devices Meeting – start-page: 6.7.1 year: 0 ident: ref36 article-title: 3D-stackable crossbar resistive memory based on field assisted superlinear threshold (FAST) selector publication-title: Proc IEEE Int Electron Devices Meeting – volume: 96 start-page: 1786 year: 0 ident: ref2 article-title: Magnetoresistive random access memory: the path to competitiveness and scalability publication-title: Proc IEEE – start-page: 10.1.1 year: 0 ident: ref20 article-title: Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current publication-title: Proc IEEE Int Electron Devices Meeting – start-page: 26.1.1 year: 0 ident: ref44 article-title: Fully functional perpendicular STT-MRAM macro embedded in 40 nm logic for energy-efficient IOT applications publication-title: Proc IEEE Int Electron Devices Meeting – ident: ref39 doi: 10.1109/ISSCC.2012.6177078 – ident: ref1 doi: 10.1038/nnano.2015.29 – ident: ref59 doi: 10.1109/IEDM.2007.4419061 – start-page: 434 year: 0 ident: ref48 article-title: A 0.5V 4Mb logic-process compatible embedded resistive RAM (Re-RAM) in 65 nm CMOS using low-voltage current-mode sensing scheme with 45ns random read time publication-title: Proc IEEE Int Solid-State Circuits Conf – ident: ref62 doi: 10.1063/1.4875748 – year: 2015 ident: ref40 publication-title: ASU Memory Chip Trend – start-page: 332 year: 0 ident: ref49 article-title: Embedded 1Mb ReRAM in 28 nm CMOS with 0.27-to-1V read using swing-sample-and-couple sense amplifier and self-boost-write-termination scheme publication-title: Proc IEEE Int Solid-State Circuits Conf – ident: ref24 doi: 10.1109/IEDM.2014.7046994 – ident: ref11 doi: 10.1109/VLSIT.2014.6894366 – ident: ref69 doi: 10.1109/ISSCC.2012.6177067 – ident: ref21 doi: 10.1109/IEDM.2013.6724732 – ident: ref67 doi: 10.1109/LED.2014.2385870 – start-page: 134 year: 0 ident: ref17 article-title: A resistance-drift compensation scheme to reduce MLC PCM raw BER by Over 100X for storage class memory applications publication-title: Proc IEEE Int Solid-State Circuit Conf – ident: ref56 doi: 10.1109/ISSCC.2014.6757458 – ident: ref34 doi: 10.1109/IEDM.2015.7409668 – ident: ref29 doi: 10.1116/1.4889999 – ident: ref3 doi: 10.1109/JPROC.2010.2070050 – ident: ref33 doi: 10.1109/IEDM.2012.6478967 – ident: ref60 doi: 10.1109/IEDM.2011.6131654 – ident: ref15 doi: 10.1109/IEDM.2011.6131478 – start-page: 192 year: 0 ident: ref55 article-title: Vertical cell array using TCAT (Terabit Cell Array Transistor) technology for ultra high density NAND flash memory publication-title: Proc IEEE Symp VLSI Technology – start-page: 76c year: 0 ident: ref72 article-title: RRAM-based 7T1R nonvolatile SRAM with 2x reduction in store energy and 94x reduction in restore energy for frequent-off instant-on applications publication-title: Proc IEEE Symp VLSI Circuits – ident: ref66 doi: 10.1109/LED.2015.2496257 – ident: ref52 doi: 10.1109/ISSCC.2014.6757460 – start-page: 100 year: 0 ident: ref16 article-title: A 1.4µA reset current phase change memory cell with integrated carbon nanotube electrodes for cross-point memory application publication-title: Proc IEEE Symp VLSI Technology – ident: ref26 doi: 10.1109/TED.2010.2062187 – ident: ref57 doi: 10.1109/ISSCC.2015.7062960 – ident: ref73 doi: 10.1109/ISSCC.2013.6487696 – ident: ref65 doi: 10.1109/ISSCC.2014.6757457 – ident: ref27 doi: 10.1109/TED.2012.2231683 – ident: ref68 doi: 10.1109/TVLSI.2010.2063444 – ident: ref74 doi: 10.1088/0957-4484/24/38/382001 – ident: ref53 doi: 10.1145/1669112.1669117 – ident: ref30 doi: 10.1109/IEDM.2011.6131653 – ident: ref18 doi: 10.1109/IEDM.2014.7046995 – ident: ref5 doi: 10.1145/2228360.2228447 – ident: ref46 doi: 10.1109/ISSCC.2012.6176872 – year: 2015 ident: ref51 – start-page: 20.7.1 year: 0 ident: ref61 article-title: HfOx based vertical RRAM for cost-effective 3D cross-point architecture without cell selector publication-title: Proc IEEE Int Electron Devices Meeting – ident: ref54 doi: 10.1109/VLSIT.2007.4339708 – ident: ref9 doi: 10.1109/IEDM.2008.4796680 – ident: ref63 doi: 10.1109/TNS.2014.2321833 – ident: ref41 doi: 10.1109/ISSCC.2010.5433948 – ident: ref37 doi: 10.1109/JSSC.2012.2235013 – ident: ref31 doi: 10.1109/VLSIT.2010.5556229 – start-page: 210 year: 0 ident: ref50 article-title: A 130.7 mm 2 2-layer 32Gb ReRAM memory device in 24nm technology publication-title: Proc IEEE Int Solid-State Circuits Conf – ident: ref42 doi: 10.1109/ISSCC.2015.7062963 – ident: ref7 doi: 10.1147/rd.524.0439 – year: 2011 ident: ref23 publication-title: Predictive Technology Model (PTM) – ident: ref71 doi: 10.1109/VLSIC.2010.5560286 – ident: ref38 doi: 10.1109/TED.2015.2492421 – ident: ref25 doi: 10.1109/JETCAS.2015.2426531 – ident: ref19 doi: 10.1109/LED.2010.2078794 – start-page: 1 year: 0 ident: ref22 article-title: Utilizing Sub-5 nm sidewall electrode technology for atomic-scale resistive memory fabrication publication-title: Proc IEEE Symp VLSI Technology – start-page: 224 year: 0 ident: ref43 article-title: Cycling endurance optimization scheme for 1Mb STT-MRAM in 40nm technology publication-title: Proc IEEE Int Solid-State Circuits Conf |
| SSID | ssj0065452 |
| Score | 2.194494 |
| Snippet | This tutorial introduces the basics of emerging nonvolatile memory (NVM) technologies including spin-transfer-torque magnetic random access memory (STTMRAM),... |
| SourceID | proquest crossref ieee |
| SourceType | Aggregation Database Enrichment Source Index Database Publisher |
| StartPage | 43 |
| SubjectTerms | Arrays Computer architecture Computer memory Design analysis Devices Electrodes Field programmable gate arrays Flip-flops Magnetic tunneling Microprocessors Nonvolatile memory Phase change random access memory Random access memory Three dimensional Trends |
| Title | Emerging Memory Technologies: Recent Trends and Prospects |
| URI | https://ieeexplore.ieee.org/document/7495087 https://www.proquest.com/docview/1799091419 https://www.proquest.com/docview/1825529118 |
| Volume | 8 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| journalDatabaseRights | – providerCode: PRVIEE databaseName: IEEE Xplore customDbUrl: eissn: 1943-0590 dateEnd: 99991231 omitProxy: false ssIdentifier: ssj0065452 issn: 1943-0582 databaseCode: RIE dateStart: 20090101 isFulltext: true titleUrlDefault: https://ieeexplore.ieee.org/ providerName: IEEE |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV3dS8MwED-2PemDX1OcTqngk9gtXdu08U3EMYSJsAl7K0kaX5ROtvZB_3rv0g9FRXxqoZc05JLL5T5-B3AuUkOwJ75rmFAuVTlypYqUG2tK69SCSVvubXrPJ4_B3SJctOCyyYUxxtjgMzOgV-vLT5e6IFPZMAqoZmnUhnYUiTJXq5a6nGplWw9yQPFo8ajyYHpMDKez2Q0FcfEBgb-XMK-fZ5AtqvJDEtvjZbwN03pgZVTJ86DI1UC_f8Ns_O_Id2Cr0jOd63Jh7ELLZHuw-QV9sAuCDFJUo8iZUrjtm9OY2fH2fOWgQol9OmXQrCOz1HlYLW1i5nof5uPb-c3ErSopuBr3cO56UqNMY_hIhQhH3MTKi2TKQ-Frpph68pXW3FM6DrnUMhqlhJIjfUHoc0r6B9DJlpk5BEdy1Be1lwZc-YHBb0gkRSzx2icDZG4PWD21ia5QxqnYxUtibxtMJMSNhLiRVNzowUXT5LWE2PiLuEuz2xBWE9uDfs2_pNqE64TA7lAdCjxsddZ8xu1DPhGZmWWBNHhDDkco8eOj33s-hg36f2l16UMnXxXmBPWQXJ3aBfgBINrXlg |
| linkProvider | IEEE |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1LT8MwDLbGOAAHXgMxGFAkTohu7dqmDTc0MQ1YJ6QNabcqScMF1KE9DvDrsdOuIECIUyvFiaI4cezY_gxwzlNNsCeerR0ubapyZAsZSjtSlNapuCNMubd4wHqP_t04GFfgssyF0Vqb4DPdpF_jy08nakFPZa3Qp5ql4QqsBmhVhHm21lLuMqqWbXzIPkWkRe3Ch-k6vBUPhx0K42JNgn_PgV4_byFTVuWHLDYXTHcL4uXU8riS5-ZiLpvq_Rtq43_nvg2bhaZpXedbYwcqOtuFjS_4gzXg9CRFVYqsmAJu36zyoR3t5ysLVUoc08rDZi2RpdbDdGJSM2d7MOrejDo9u6ilYCs8xXPbFQqlmoOflPOgzXQk3VCkLOCecqQjnzypFHOligImlAjbKeHkCI8T_pwU3j5Us0mmD8ASDDVG5aY-k56vsQ2JBI8EGn7CR_bWwVkubaIKnHEqd_GSGHvD4QlxIyFuJAU36nBRdnnNQTb-Iq7R6paExcLWobHkX1Icw1lCcHeoEPku9jorm_EAkVdEZHqyQBq0kYM2yvzo8PeRT2GtN4r7Sf92cH8E6zSX_A2mAdX5dKGPUSuZyxOzGT8An6ra5w |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Emerging+Memory+Technologies%3A+Recent+Trends+and+Prospects&rft.jtitle=IEEE+solid+state+circuits+magazine&rft.au=Yu%2C+Shimeng&rft.au=Pai-Yu%2C+Chen&rft.date=2016-01-01&rft.pub=The+Institute+of+Electrical+and+Electronics+Engineers%2C+Inc.+%28IEEE%29&rft.issn=1943-0582&rft.eissn=1943-0590&rft.volume=8&rft.issue=2&rft.spage=43&rft_id=info:doi/10.1109%2FMSSC.2016.2546199&rft.externalDBID=NO_FULL_TEXT&rft.externalDocID=4098367851 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1943-0582&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1943-0582&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1943-0582&client=summon |