Communication-Defect-Free Filling of High Aspect Ratio Through Vias in Ultrathin Glass

We report an all-solution, simple process (DC plating with single additive) for metallizing high aspect ratio (AR = 5 and AR∼12) through vias in ultrathin glass (thickness ∼100 um). Highly uniform and continuous Cu seed layer is first achieved by a simple surface modification, Sn/Pd catalyst adsorpt...

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Published inJournal of the Electrochemical Society Vol. 166; no. 1; pp. D3155 - D3157
Main Authors Chang, Yiu-Hsiang, Tseng, Pei-Lien, Lin, Jen-Chieh, Chen, Jie-Chi, Huang, Meng-Chi, Lin, Hung-Yi, Pollard, Scott, Mazumder, Prantik
Format Journal Article
LanguageEnglish
Published The Electrochemical Society 2019
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ISSN0013-4651
1945-7111
DOI10.1149/2.0181901jes

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Summary:We report an all-solution, simple process (DC plating with single additive) for metallizing high aspect ratio (AR = 5 and AR∼12) through vias in ultrathin glass (thickness ∼100 um). Highly uniform and continuous Cu seed layer is first achieved by a simple surface modification, Sn/Pd catalyst adsorption and Cu electroless plating. Subsequently, the vias are filled by DC plating in the presence of a single additive nitrotetrazolium blue chloride (NBT). The strong inhibition effect of NBT is exploited to first bridge the center of the vias followed by filling of two blind vias.
Bibliography:0181901JES
ISSN:0013-4651
1945-7111
DOI:10.1149/2.0181901jes