RF CMOS modeling： a novel empirical large-signal model for an RF-MOSFET

A novel empirical model for large-signal modeling of an RF-MOSFET is proposed. The proposed model is validated in the DC, AC, small-signal and large-signal characteristics of a 32-finger nMOSFET fabricated in SMIC＇s 0.18 μm RF CMOS technology. The power dissipation caused by self-heating is describe...

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Published inJournal of semiconductors Vol. 31; no. 4; pp. 52 - 56
Main Author 孙玲玲 吕彬义 刘军 陈磊
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.04.2010
Subjects
CMOS技术
MOSFET
MOS管
RF
信号特性
大信号模型
射频
建模
Online AccessGet full text
ISSN1674-4926
DOI10.1088/1674-4926/31/4/044009

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Abstract A novel empirical model for large-signal modeling of an RF-MOSFET is proposed. The proposed model is validated in the DC, AC, small-signal and large-signal characteristics of a 32-finger nMOSFET fabricated in SMIC＇s 0.18 μm RF CMOS technology. The power dissipation caused by self-heating is described. Excellent agreement is achieved between simulation and measurement for DC, S-parameters （50 MHz-40 GHz）, and power characteristics, which shows that our model is accurate and reliable.
AbstractList A novel empirical model for large-signal modeling of an RF-MOSFET is proposed. The proposed model is validated in the DC, AC, small-signal and large-signal characteristics of a 32-finger nMOSFET fabricated in SMIC＇s 0.18 μm RF CMOS technology. The power dissipation caused by self-heating is described. Excellent agreement is achieved between simulation and measurement for DC, S-parameters （50 MHz-40 GHz）, and power characteristics, which shows that our model is accurate and reliable.
Author 孙玲玲 吕彬义 刘军 陈磊
AuthorAffiliation Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China
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Cites_doi 10.1109/TMTT.2004.837196
10.1109/JSSC.2005.848143
10.1109/TED.2006.880364
10.1109/16.658823
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Notes self heating
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RF-MOSFET
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SubjectTerms CMOS技术
MOSFET
MOS管
RF
信号特性
大信号模型
射频
建模
Title RF CMOS modeling： a novel empirical large-signal model for an RF-MOSFET
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