RF CMOS modeling： a novel empirical large-signal model for an RF-MOSFET

A novel empirical model for large-signal modeling of an RF-MOSFET is proposed. The proposed model is validated in the DC, AC, small-signal and large-signal characteristics of a 32-finger nMOSFET fabricated in SMIC＇s 0.18 μm RF CMOS technology. The power dissipation caused by self-heating is describe...

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Bibliographic Details
Published inJournal of semiconductors Vol. 31; no. 4; pp. 52 - 56
Main Author 孙玲玲 吕彬义 刘军 陈磊
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.04.2010
Subjects
CMOS技术
MOSFET
MOS管
RF
信号特性
大信号模型
射频
建模
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ISSN1674-4926
DOI10.1088/1674-4926/31/4/044009

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Summary:A novel empirical model for large-signal modeling of an RF-MOSFET is proposed. The proposed model is validated in the DC, AC, small-signal and large-signal characteristics of a 32-finger nMOSFET fabricated in SMIC＇s 0.18 μm RF CMOS technology. The power dissipation caused by self-heating is described. Excellent agreement is achieved between simulation and measurement for DC, S-parameters （50 MHz-40 GHz）, and power characteristics, which shows that our model is accurate and reliable.
Bibliography:self heating
TN386
TN386.1
RF-MOSFET
RF-MOSFET; large-signal model; self heating
11-5781/TN
large-signal model
ISSN:1674-4926
DOI:10.1088/1674-4926/31/4/044009