Role of incident kinetic energy of adatoms in thin film growth
Film growth as a function of incident kinetic energy of adatoms is studied by employing two-dimensional molecular dynamics simulations for Lennard-Jones particles. At thermal incident kinetic energies films exhibit a high void and defect content when grown on a zero temperature substrate. Films grow...
Saved in:
Published in | Surface science letters Vol. 184; no. 1; pp. L375 - L382 |
---|---|
Main Author | |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
02.06.1987
|
Online Access | Get full text |
ISSN | 0167-2584 |
DOI | 10.1016/0167-2584(87)90761-4 |
Cover
Summary: | Film growth as a function of incident kinetic energy of adatoms is studied by employing two-dimensional molecular dynamics simulations for Lennard-Jones particles. At thermal incident kinetic energies films exhibit a high void and defect content when grown on a zero temperature substrate. Films grown at adatom incident kinetic energies typical for sputter deposition show higher average density and improved epitaxy due to the larger impact mobility of condensing atoms. |
---|---|
ISSN: | 0167-2584 |
DOI: | 10.1016/0167-2584(87)90761-4 |