Role of incident kinetic energy of adatoms in thin film growth

Film growth as a function of incident kinetic energy of adatoms is studied by employing two-dimensional molecular dynamics simulations for Lennard-Jones particles. At thermal incident kinetic energies films exhibit a high void and defect content when grown on a zero temperature substrate. Films grow...

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Bibliographic Details
Published inSurface science letters Vol. 184; no. 1; pp. L375 - L382
Main Author Müller, Karl-Heinz
Format Journal Article
LanguageEnglish
Published Elsevier B.V 02.06.1987
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ISSN0167-2584
DOI10.1016/0167-2584(87)90761-4

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Summary:Film growth as a function of incident kinetic energy of adatoms is studied by employing two-dimensional molecular dynamics simulations for Lennard-Jones particles. At thermal incident kinetic energies films exhibit a high void and defect content when grown on a zero temperature substrate. Films grown at adatom incident kinetic energies typical for sputter deposition show higher average density and improved epitaxy due to the larger impact mobility of condensing atoms.
ISSN:0167-2584
DOI:10.1016/0167-2584(87)90761-4