Driven oscillations of the carrier concentration in semiconducting TTF-TCNQ
The large phase change within a few K observed in TTF-TCNQ near 12 K by harmonic mixing of microwaves is explained by assuming a relaxation behaviour of the generation rate of carriers. It is shown that in an a.c. field the non-Ohmic contribution to the conductivity is subject to driven oscillations...
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| Published in | Solid state communications Vol. 32; no. 7; pp. 557 - 560 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
Elsevier Ltd
01.01.1979
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| Online Access | Get full text |
| ISSN | 0038-1098 1879-2766 |
| DOI | 10.1016/0038-1098(79)90375-2 |
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| Summary: | The large phase change within a few K observed in TTF-TCNQ near 12 K by harmonic mixing of microwaves is explained by assuming a relaxation behaviour of the generation rate of carriers. It is shown that in an a.c. field the non-Ohmic contribution to the conductivity is subject to driven oscillations. Although there is no resonance behavior in the amplitude of the signal since both the eigenfrequency and the damping depend on the relaxation times, the resonance manifests itself in the sudden phase change. It is also shown how the recombination relaxation determines the nonlinear d.c. characteristics. |
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| ISSN: | 0038-1098 1879-2766 |
| DOI: | 10.1016/0038-1098(79)90375-2 |