Heteroepitaxial fabrication and structural characterizations of ultrathin GaN nanotube arrays

• Published in: Journal of the Korean Physical Society Vol. 61; no. 3; pp. 305 - 308
• Main Author: An, Sung Jin
• Format: Journal Article
• Language: English
• Published: Seoul The Korean Physical Society 01.08.2012; 한국물리학회
• Subjects: Letters; Mathematical and Computational Physics; Particle and Nuclear Physics; Physics; Physics and Astronomy; Theoretical; 물리학; Heterostructure; ZnO; GaN; Nanotube
• ISSN: 0374-4884; 1976-8524
• DOI: 10.3938/jkps.61.305

We report on the heteroepitaxial fabrication and the structural characterizations of ultrafine GaN nanotube arrays. The ultrathin GaN nanotube arrays were fabricated by using epitaxial growth of a ultrathin GaN layer on ZnO nanoneedles and etching core Zno nanoneedles. Epitaxial growth of GaN and precise etcing control of core ZnO nanoneedles were obtained by using low-pressure metalorganic vapor-phase epitaxy. ZnO nanoneedles were grown on Si and sapphire substrates by using catalyst-free metal-organic chemical vapor deposition. Furthermore, the structural properties of the nanostructures were investigated using both synchrotron-radiation X-ray diffraction and highresolution transmission electron microscopy. The strain induced during the GaN deposition on ZnO was nearly sustained even after the removal of core ZnO.