APA (7th ed.) Citation

Jarndal, A., Husain, S., & Hashmi, M. (2021). Genetic algorithm initialized artificial neural network based temperature dependent small‐signal modeling technique for GaN high electron mobility transistors. International journal of RF and microwave computer-aided engineering, 31(3), -n/a. https://doi.org/10.1002/mmce.22542

Chicago Style (17th ed.) Citation

Jarndal, Anwar, Saddam Husain, and Mohammad Hashmi. "Genetic Algorithm Initialized Artificial Neural Network Based Temperature Dependent Small‐signal Modeling Technique for GaN High Electron Mobility Transistors." International Journal of RF and Microwave Computer-aided Engineering 31, no. 3 (2021): -n/a. https://doi.org/10.1002/mmce.22542.

MLA (9th ed.) Citation

Jarndal, Anwar, et al. "Genetic Algorithm Initialized Artificial Neural Network Based Temperature Dependent Small‐signal Modeling Technique for GaN High Electron Mobility Transistors." International Journal of RF and Microwave Computer-aided Engineering, vol. 31, no. 3, 2021, pp. -n/a, https://doi.org/10.1002/mmce.22542.