Detailed analysis of spin-dependent quantum interference effects in magnetic tunnel junctions with Fe quantum wells

We investigated spin-dependent quantum interference effects in Cr(001)/wedge Fe(001)/MgO(001)/Fe(001) magnetic tunnel junctions by dI/dV measurements. dI/dV intensities were mapped two-dimensionally as a function of applied voltage and Fe thickness, indicating a clear signature of quantum well (QW)...

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Published inApplied physics letters Vol. 102; no. 3
Main Authors Sheng, P., Bonell, F., Miwa, S., Nakamura, T., Shiota, Y., Murakami, S., Lam, D. D., Yoshida, S., Suzuki, Y.
Format Journal Article
LanguageEnglish
Published American Institute of Physics 21.01.2013
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ISSN0003-6951
1077-3118
DOI10.1063/1.4789438

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Summary:We investigated spin-dependent quantum interference effects in Cr(001)/wedge Fe(001)/MgO(001)/Fe(001) magnetic tunnel junctions by dI/dV measurements. dI/dV intensities were mapped two-dimensionally as a function of applied voltage and Fe thickness, indicating a clear signature of quantum well (QW) states in the ultrathin Fe (001) electrode. However, resonant positions of QW states were systematically shifted by one monolayer when compared with the first-principles calculation results. X-ray absorption spectroscopy and magnetic circular dichroism measurements were also performed. While Fe oxide presence at Fe/MgO interface was ruled out, Fe/Cr intermixing could not be excluded. Hence, controlling the Fe/Cr interface may affect QW state.
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ISSN:0003-6951
1077-3118
DOI:10.1063/1.4789438