Multi-Coding ECC Algorithm Based on 3D Charge Trap NAND Flash Hot Region Cell Prediction

• Published in: IEEE communications letters Vol. 24; no. 2; pp. 244 - 248
• Main Authors: Jiang, Yiyang, Wang, Qi, Li, Qianhui, Huo, Zongliang
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.02.2020; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: 3D-CT NAND flash; Algorithms; Coding; Data models; Degradation; Encoding; Error analysis; Error correction codes; hot region cell redistribution; Multi-Coding ECC; RBER balance; Silicon; Three dimensional models; Three-dimensional displays; Threshold voltage; threshold voltage shift model
• ISSN: 1089-7798; 1558-2558
• DOI: 10.1109/LCOMM.2019.2953034

In this letter, threshold voltage shift model based on 3D Charge Trap NAND flash channel characteristics is built for analyzing the distribution shift and error source of algorithms at different storage time. Multi-Coding BCH based on Hot Region (MC-HR-BCH) is a scheme consists of 3 algorithms. It offers good correction capability (130 to 144 errors per 1276 bytes) based on BCH(n = 9200, k = 8192, t = 72). With the help of MC-HR-BCH, the diversity of data in storage time is well handled.