Current Induced Non-Volatile Resistive Switching Effect in Silicon Devices with Large Magnetoresistance

We develop a non-volatile resistive switching device in a Si-SiO2-Mg structure with an on/off ratio of about 4.5 at a certain transition voltage after being stimulated by a large current. It is observed that the resistance transition voltage Vt shifts reproducibly under a reversed large current. By...

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Bibliographic Details
Published inChinese physics letters Vol. 31; no. 7; pp. 156 - 159
Main Author 王集敏 章晓中 朴红光 罗昭初 熊成悦
Format Journal Article
LanguageEnglish
Published 01.07.2014
Subjects
Electric potential
Endurance
Magnetic properties
Magnetoresistance
Magnetoresistivity
Si-SiO2
Silicon devices
Switching
Voltage
开关效应
开关装置
感应电流
电压依赖性
硅器件
磁电阻
非挥发性
Online AccessGet full text
ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/31/7/077201

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Summary:We develop a non-volatile resistive switching device in a Si-SiO2-Mg structure with an on/off ratio of about 4.5 at a certain transition voltage after being stimulated by a large current. It is observed that the resistance transition voltage Vt shifts reproducibly under a reversed large current. By applying a reading voltage in the range of Vt, non-volatile resistive switching phenomena with an endurance of more than 80 cycles are observed. Moreover, it is also found that the magnetic field could shift Vt to higher values, yielding a voltage dependent room-temperature magnetoresistance in the range of 10^3 % at 1 T. The multifunctional properties of the silicon device suggested by this work may be beneficial to the silicon based industry.
Bibliography:11-1959/O4
WANG Ji-Min, ZHANG Xiao-Zhong, PIAO Hong-Guang, LUO Zhao-Chu, XIONG Cheng-Yue（ 1Key Laboratory of Advanced Materials （MOE）, School of Materials Science and Engineering, Tsinghua University, Beijing 100084 ; 2National Center for Electron Microscopy （Beijing）, Tsinghua University, Beijing 100084）
We develop a non-volatile resistive switching device in a Si-SiO2-Mg structure with an on/off ratio of about 4.5 at a certain transition voltage after being stimulated by a large current. It is observed that the resistance transition voltage Vt shifts reproducibly under a reversed large current. By applying a reading voltage in the range of Vt, non-volatile resistive switching phenomena with an endurance of more than 80 cycles are observed. Moreover, it is also found that the magnetic field could shift Vt to higher values, yielding a voltage dependent room-temperature magnetoresistance in the range of 10^3 % at 1 T. The multifunctional properties of the silicon device suggested by this work may be beneficial to the silicon based industry.
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ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/31/7/077201