Large Magnetoconductance in GaAs Induced by Impact Ionization

We have investigated this magneto-switching behavior in GaAs structure. Exposing these devices to a small magnetic field (< 0.5 Tesla) induced a change in conductance that was above 100,000% at 10 K and up to 1,000% at 300 K. We also observed a variety of transport mechanisms in a single device t...

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Bibliographic Details
Published inJournal of the Korean Physical Society Vol. 75; no. 12; pp. 1017 - 1020
Main Authors Kim, Taeyueb, Joo, Sungjung, Koo, Hyun Cheol, Hong, Jinki
Format Journal Article
LanguageEnglish
Published Seoul The Korean Physical Society 01.12.2019
Springer Nature B.V
한국물리학회
Subjects
Mathematical and Computational Physics
Particle and Nuclear Physics
Physics
Physics and Astronomy
Resistance
Switching
Theoretical
물리학
Space-charge effect
Impact ionization
Magnetoresistance
GaAs
Avalanche effect
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ISSN0374-4884
1976-8524
DOI10.3938/jkps.75.1017

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Summary:We have investigated this magneto-switching behavior in GaAs structure. Exposing these devices to a small magnetic field (< 0.5 Tesla) induced a change in conductance that was above 100,000% at 10 K and up to 1,000% at 300 K. We also observed a variety of transport mechanisms in a single device that were clearly distinguished according to the bias voltage and their characteristic magnetoconductance can be specified. This work represents important progress in understanding the physics of the magneto-switching function and achieving large ON/OFF ratios.
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ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.75.1017