Radiation enhanced diffusion of low energy ion-induced damage
We have investigated the influence of concurrent above-band-gap laser illumination on the damage profile of GaAs/AlGaAs heterostructures subject to low energy (sub-keV) Ar+ ion bombardment. A dramatic change in damage profile was observed for these samples, compared with those that were not laser il...
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| Published in | Applied physics letters Vol. 69; no. 1; pp. 58 - 60 |
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| Main Authors | , , , , |
| Format | Journal Article |
| Language | English |
| Published |
01.07.1996
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| Online Access | Get full text |
| ISSN | 0003-6951 1077-3118 |
| DOI | 10.1063/1.118118 |
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| Abstract | We have investigated the influence of concurrent above-band-gap laser illumination on the damage profile of GaAs/AlGaAs heterostructures subject to low energy (sub-keV) Ar+ ion bombardment. A dramatic change in damage profile was observed for these samples, compared with those that were not laser illuminated, and the degradation increases with the illuminated power intensity. Below-band-gap illumination results in a minimal increase in damage profile. Such results indicate the possibility of radiation-enhanced diffusion of defects, and may explain the observed high defect diffusivity at room temperature. |
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| AbstractList | We have investigated the influence of concurrent above-band-gap laser illumination on the damage profile of GaAs/AlGaAs heterostructures subject to low energy (sub-keV) Ar+ ion bombardment. A dramatic change in damage profile was observed for these samples, compared with those that were not laser illuminated, and the degradation increases with the illuminated power intensity. Below-band-gap illumination results in a minimal increase in damage profile. Such results indicate the possibility of radiation-enhanced diffusion of defects, and may explain the observed high defect diffusivity at room temperature. |
| Author | Chen, Ching-Hui Hu, Evelyn L. Ibbetson, James P. Petroff, Pierre M. Green, Debora L. |
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