Radiation enhanced diffusion of low energy ion-induced damage

We have investigated the influence of concurrent above-band-gap laser illumination on the damage profile of GaAs/AlGaAs heterostructures subject to low energy (sub-keV) Ar+ ion bombardment. A dramatic change in damage profile was observed for these samples, compared with those that were not laser il...

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Bibliographic Details
Published inApplied physics letters Vol. 69; no. 1; pp. 58 - 60
Main Authors Chen, Ching-Hui, Green, Debora L., Hu, Evelyn L., Ibbetson, James P., Petroff, Pierre M.
Format Journal Article
LanguageEnglish
Published 01.07.1996
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ISSN0003-6951
1077-3118
DOI10.1063/1.118118

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Summary:We have investigated the influence of concurrent above-band-gap laser illumination on the damage profile of GaAs/AlGaAs heterostructures subject to low energy (sub-keV) Ar+ ion bombardment. A dramatic change in damage profile was observed for these samples, compared with those that were not laser illuminated, and the degradation increases with the illuminated power intensity. Below-band-gap illumination results in a minimal increase in damage profile. Such results indicate the possibility of radiation-enhanced diffusion of defects, and may explain the observed high defect diffusivity at room temperature.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.118118