Engineering Ta-doped MoSex sensitive films in extended-gate field-effect transistors for ultrahigh sensitivity detection of epinephrine at fM levels

• Published in: Journal of industrial and engineering chemistry (Seoul, Korea) Vol. 142; pp. 348 - 358
• Main Authors: Pan, Tung-Ming, Shih, Chin-Yu, Lin, Li-An
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 25.02.2025; 한국공업화학회
• Subjects: Epinephrine detection; extended-gate field-effect transistor (EGFET); Flexible; polyimide (PI); Ta-doped MoSex; 화학공학; polyimide (PI); Epinephrine detection; Flexible; Ta-doped MoSex; extended-gate field-effect transistor (EGFET)
• ISSN: 1226-086X; 1876-794X
• DOI: 10.1016/j.jiec.2024.07.040

[Display omitted] This study presents the production of Ta-doped MoSex films on a flexible polyimide (PI)-based extended-gate field-effect transistor (EGFET) using a straightforward sputtering technique, which is applied for the first time in the evaluation of epinephrine. The Ta-doped MoSex-based EGFET flexible PI sensor through the functionalization of 4-formylphenylboronic acid (4-FPBA), a synthetic receptor allowing for the covalent attachment of epinephrine on the sensing surface. The sensitivity to epinephrine reached 11.48 mV/CEP, with a linearity of 99.912 % within the concentration range of 10-8 to 0.01 μM. Additionally, this flexible sensor exhibited a heightened reference voltage shift response to epinephrine when compared to other neurotransmitters. The successful implementation of this straightforward sputtering engineering method, capable of effectively modifying both the surface and composition of the Ta-doped MoSex film, paves the way for exploring new possibilities in developing diverse types of flexible and adjustable biosensors.