Scattering Rates in a Semiconductor Heterostructure: The Electron–Phonon Coupling

We investigate Scattering-Rates due to the electron–phonon interaction in a Semiconductor Heterostructure (SH) on the basis of a phenomenological theory for Polar Optical Phonons (POP) in semiconductor nanostructures which was proposed in the latter times. The applied theory has led to a plausible d...

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Published inInternational journal of modern physics. B, Condensed matter physics, statistical physics, applied physics Vol. 12; no. 16n17; pp. 1719 - 1728
Main Authors Comas, F., Castro, F., Gondar, J. L.
Format Journal Article
LanguageEnglish
Published World Scientific Publishing Company 10.07.1998
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ISSN0217-9792
1793-6578
DOI10.1142/S0217979298000946

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Summary:We investigate Scattering-Rates due to the electron–phonon interaction in a Semiconductor Heterostructure (SH) on the basis of a phenomenological theory for Polar Optical Phonons (POP) in semiconductor nanostructures which was proposed in the latter times. The applied theory has led to a plausible description of POP in Quantum-Wells, Quantum-Wires and Quantum-Dots. Using this theory we find an explicit expression for the electron–phonon Hamiltonian with direct application to a SH. Scattering Rates are calculated by applying this Hamiltonian and also a realistic wave-function for the electron states (using Airy functions) is considered. The obtained results are discussed in detail and compared with previous works on the subject.
ISSN:0217-9792
1793-6578
DOI:10.1142/S0217979298000946