Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide
The upper waveguide （UWG） has direct influences on the optical and electrical characteristics of the violet laser diode （LD） by changing the optical field distribution or barrier of the electron blocking layer （EBL）. In this study, a series of InGaN-based violet LDs with different UWGs are investiga...
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| Published in | Chinese physics B Vol. 26; no. 12; pp. 302 - 306 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.12.2017
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| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 |
| DOI | 10.1088/1674-1056/26/12/124210 |
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| Summary: | The upper waveguide （UWG） has direct influences on the optical and electrical characteristics of the violet laser diode （LD） by changing the optical field distribution or barrier of the electron blocking layer （EBL）. In this study, a series of InGaN-based violet LDs with different UWGs are investigated systematically with LASTIP software. It is found that the output light power （OLP） under an injecting current of 120 mA or the threshold current （Ith） is deteriorated when the UWG is u-In0.02Ga0.98N/GaN or u-In0.02Ga0.98N/AlxGa1-xN （0 ≤ x ≤ 0.1）, which should be attributed to small optical confinement factor （OCF） or severe electron leakage. Therefore, a new violet LD structure with u-In0.02Ga0.98N/GaN/Al0.05Ga0.95N multiple layer UWG is proposed to reduce the optical loss and increase the barrier of EBL. Finally, the output light power under an injecting current of 120 mA is improved to 176.4 mW. |
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| Bibliography: | InGaN-based violet LDs; u-InGaN/GaN/AlGaN multiple upper waveguide 11-5639/O4 The upper waveguide （UWG） has direct influences on the optical and electrical characteristics of the violet laser diode （LD） by changing the optical field distribution or barrier of the electron blocking layer （EBL）. In this study, a series of InGaN-based violet LDs with different UWGs are investigated systematically with LASTIP software. It is found that the output light power （OLP） under an injecting current of 120 mA or the threshold current （Ith） is deteriorated when the UWG is u-In0.02Ga0.98N/GaN or u-In0.02Ga0.98N/AlxGa1-xN （0 ≤ x ≤ 0.1）, which should be attributed to small optical confinement factor （OCF） or severe electron leakage. Therefore, a new violet LD structure with u-In0.02Ga0.98N/GaN/Al0.05Ga0.95N multiple layer UWG is proposed to reduce the optical loss and increase the barrier of EBL. Finally, the output light power under an injecting current of 120 mA is improved to 176.4 mW. Feng Liang1,2, De-Gang Zhao1,3, De-Sheng Jiang1, Zong-Shun Liu1, Jian-Jun Zhu1, Ping Chen1, Jing Yang1, Wei Liu1, Shuang-Tao Liu1, Yao Xing1, Li-Qun Zhang4, Wen-Jie Wang5, Mo Li5, Yuan-Tao Zhang1, Guo-Tong Du1（1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China;2. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;3. School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;4. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;5. Microsystem ＆ Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China） |
| ISSN: | 1674-1056 2058-3834 |
| DOI: | 10.1088/1674-1056/26/12/124210 |