Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment
In this paper,the enhancement-mode AlGaN/GaN HEMT combined with the low damage recessed-gate etching and the optimized oxygen plasma treatment was fabricated.Scanning electron microscope/energy dispersive spectrometer（SEM/EDS） method and x-ray photoelectron spectroscopy（XPS） method were used to conf...
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| Published in | Chinese physics B Vol. 25; no. 11; pp. 470 - 475 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.11.2016
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| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 |
| DOI | 10.1088/1674-1056/25/11/117305 |
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| Summary: | In this paper,the enhancement-mode AlGaN/GaN HEMT combined with the low damage recessed-gate etching and the optimized oxygen plasma treatment was fabricated.Scanning electron microscope/energy dispersive spectrometer（SEM/EDS） method and x-ray photoelectron spectroscopy（XPS） method were used to confirm the formation of oxides.Based on the experimental results,the obtained enhancement-mode HEMT exhibited a threshold voltage of 0.5 V,a high peak transconductance of 210 mS/mm,and a maximum drain current of 610 mA/mm at the gate bias of 4 V.Meanwhile,the on/off current ratio of enhancement-mode HEMT was as high as 10 8,drain induced barrier lowering（DIBL） was as low as 5 raV/V,and subthreshold swing（SS） of 80 mV/decade was obtained.Compared with the conventional HEMT,the Schottky reverse current of enhancement-mode HEMT was three orders of magnitude lower,and the off-state breakdown voltage of which was higher.In addition,a power gain cutoff frequency（/max） of the enhancement-mode HEMT was larger than that of the conventional one. |
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| Bibliography: | In this paper,the enhancement-mode AlGaN/GaN HEMT combined with the low damage recessed-gate etching and the optimized oxygen plasma treatment was fabricated.Scanning electron microscope/energy dispersive spectrometer（SEM/EDS） method and x-ray photoelectron spectroscopy（XPS） method were used to confirm the formation of oxides.Based on the experimental results,the obtained enhancement-mode HEMT exhibited a threshold voltage of 0.5 V,a high peak transconductance of 210 mS/mm,and a maximum drain current of 610 mA/mm at the gate bias of 4 V.Meanwhile,the on/off current ratio of enhancement-mode HEMT was as high as 10 8,drain induced barrier lowering（DIBL） was as low as 5 raV/V,and subthreshold swing（SS） of 80 mV/decade was obtained.Compared with the conventional HEMT,the Schottky reverse current of enhancement-mode HEMT was three orders of magnitude lower,and the off-state breakdown voltage of which was higher.In addition,a power gain cutoff frequency（/max） of the enhancement-mode HEMT was larger than that of the conventional one. 11-5639/O4 AlGaN drain Schottky breakdown lowering photoelectron spectrometer leakage cutoff dispersive |
| ISSN: | 1674-1056 2058-3834 |
| DOI: | 10.1088/1674-1056/25/11/117305 |