N-type GaSb single crystals with high below-band gap transmission

Te-doped GaSb single crystals are studied by measuring Hall effect, infrared （IR） transmission and photoluminescence （PL） spectra. It is found that the n-type GaSb with IR transmittance can be obtained as high as 60% by the critical control of the Te-doping concentration and electrical compensation....

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Published inChinese physics B Vol. 26; no. 10; pp. 442 - 445
Main Author 白永彪 赵有文 沈桂英 陈晓玉 刘京明 谢晖 董志远 杨俊 杨凤云 王凤华
Format Journal Article
LanguageEnglish
Published 01.10.2017
Subjects
GaSb
传输
单晶
带隙
掺杂浓度
红外透过率
锑化镓
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/26/10/107801

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Summary:Te-doped GaSb single crystals are studied by measuring Hall effect, infrared （IR） transmission and photoluminescence （PL） spectra. It is found that the n-type GaSb with IR transmittance can be obtained as high as 60% by the critical control of the Te-doping concentration and electrical compensation. The concentration of the native acceptor-associated defects is apparently low in the Te-doped GaSb compared with those in undoped and heavily Te-doped GaSb. The mechanism for the high IR transmittance is analyzed by considering the defect-involved optical absorption process.
Bibliography:Yong-Biao Bai1,2, You-Wen Zhao1,2, Gui-Ying Shen1,2, Xiao-Yu Chen1,2, Jing-Ming Liu1, Hui Xie1, Zhi-Yuan Dong, Jun Yang1, Feng-Yun Yang1, Feng-Hua Wang1（1 Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China ; 2 College of Materials Science and Opto-electronic Technology, Univeristy of Chinese Academy of Sciences, Beijing 100049, China）
Te-doped GaSb, infrared transmission, native defects, PL
11-5639/O4
Te-doped GaSb single crystals are studied by measuring Hall effect, infrared （IR） transmission and photoluminescence （PL） spectra. It is found that the n-type GaSb with IR transmittance can be obtained as high as 60% by the critical control of the Te-doping concentration and electrical compensation. The concentration of the native acceptor-associated defects is apparently low in the Te-doped GaSb compared with those in undoped and heavily Te-doped GaSb. The mechanism for the high IR transmittance is analyzed by considering the defect-involved optical absorption process.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/26/10/107801